參數(shù)資料
型號(hào)： JANSR2N7440
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
中文描述： 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
文件頁數(shù)： 2/8頁
文件大?。?/td> 71K
代理商： JANSR2N7440
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
JANSR2N7440
-100
-100
UNITS
V
V
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation
T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
6
30
±
20
A
A
A
V
56
22
0.45
30
10
30
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
4.4
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 1mA, V
GS
= 0V
-100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-7.0
V
-2.0
-
-6.0
V
-1.0
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -80V,
V
GS
= 0V
-
-
25
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
V
GS
= -12V, I
D
= 10A
-
-
-3.10
V
Drain to Source On Resistance
r
DS(ON)12
I
D
= 6A,
V
GS
= -12V
T
C
= 25
o
C
T
C
= 125
o
C
-
0.190
0.280
-
-
0.500
Turn-On Delay Time
t
d(ON)
V
DD
= -50V, I
D
= 10A,
R
L
= 5.0
, V
GS
= -12V,
R
GS
= 7.5
-
-
20
ns
Rise Time
t
r
-
-
55
ns
Turn-Off Delay Time
t
d(OFF)
-
-
45
ns
Fall Time
t
f
-
-
35
ns
Total Gate Charge (Not on slash sheet)
Q
g(TOT)
V
GS
= 0V to -20V
V
DD
= -50V,
I
D
= 10A
-
-
60
nC
Gate Charge at 12V
Q
g(12)
V
GS
= 0V to -12V
-
36
40
nC
Threshold Gate Charge (Not on slash sheet)
Q
g(TH)
V
GS
= 0V to -2V
-
-
2.5
nC
Gate Charge Source
Q
gs
-
6.6
7.4
nC
Gate Charge Drain
Q
gd
-
17
19
nC
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
-
-
2.2
o
C/W
Thermal Resistance Junction to Ambient
-
-
60
o
C/W
JANSR2N7440
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