參數(shù)資料
型號: JANSR2N7439
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: Formerly Available As FSL923A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
中文描述: 5 A, 200 V, 0.67 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 3/8頁
文件大?。?/td> 71K
代理商: JANSR2N7439
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
I
SD
= 10A
I
SD
= 10A,dI
SD
/dt = 100A/
μ
s
-0.6
-
-1.8
V
Reverse Recovery Time
-
-
160
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0, V
DS
= -80V
V
GS
= -12V, I
D
= 10A
V
GS
= -12V, I
D
= 6A
-100
-
V
Gate to Source Threshold Volts
(Note 3)
-2.0
-6.0
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
Zero Gate Leakage
(Note 3)
-
25
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
-
-3.10
V
Drain to Source On Resistance
(Notes 1, 3)
-
0.280
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= -12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
-100
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating Area
SEESOA
Ni
26
43
20
Br
37
36
10
-100
Br
37
36
15
-80
Br
37
36
20
-50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T
C
= 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
-120
-100
-80
-60
-40
-20
0
0
10
15
20
25
5
V
D
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
V
GS
(V)
-300
-100
-10
L
DRAIN SUPPLY (V)
-1000
ILM = 10A
300A
1E-4
1E-5
1E-6
-30
100A
30A
1E-3
1E-7
JANSR2N7440
相關PDF資料
PDF描述
JANSR2N7272 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7275 CA-BAYONET
JANSR2N7278 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7281 Radiation Hardened, N-Channel Power MOSFET
JANSR2N7292 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
JANSR2N7444U 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk
JANSR2N7463T2 制造商:International Rectifier 功能描述:400V, 3.0A, 1.2 OHM CH - Rail/Tube
JANSR2N7464T2 制造商:International Rectifier 功能描述:500V 2.600A HEXFET RADHARD - Bulk
JANSR2N7465U3 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 5A 3SMD-0.5 - Rail/Tube
JANSR2N7466U3 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk