參數(shù)資料
型號: JANSR2N7426U
廠商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
中文描述: 抗輻射功率MOSFET表面貼裝系統(tǒng)(SMD - 2)
文件頁數(shù): 8/8頁
文件大?。?/td> 118K
代理商: JANSR2N7426U
IRHNA9260, JANSR2N7426U
Pre-Irradiation
8
www.irf.com
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
Total Dose Irradiation with VDS Bias.
-160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD =-50V, starting TJ = 25
°
C, L = 1.2mH,
Peak IL= -29A, VGS = -12V
ISD
- 29A, di/dt
-377A/
μ
s,
VDD
- 200V, TJ
150
°
C
Pulse width
300
μ
s; Duty Cycle
2%
Footnotes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 11/00
Case Outline and Dimensions
SMD-2
相關PDF資料
PDF描述
JANSF2N7426U RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
JANSR2N7440 Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
JANSR2N7403 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET
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