- 您現(xiàn)在的位置：買賣IC網 > PDF目錄384553 > JANSR2N7423 (International Rectifier) RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) PDF資料下載
參數(shù)資料
| 型號： | JANSR2N7423 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（T0代- 254AA） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 71K |
| 代理商： | JANSR2N7423 |
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
I
SD
= 10A
I
SD
= 10A,dI
SD
/dt = 100A/
μ
s
-0.6
-
-1.8
V
Reverse Recovery Time
-
-
160
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0, V
DS
= -80V
V
GS
= -12V, I
D
= 10A
V
GS
= -12V, I
D
= 6A
-100
-
V
Gate to Source Threshold Volts
(Note 3)
-2.0
-6.0
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
Zero Gate Leakage
(Note 3)
-
25
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
-
-3.10
V
Drain to Source On Resistance
(Notes 1, 3)
-
0.280
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= -12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
-100
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating Area
SEESOA
Ni
26
43
20
Br
37
36
10
-100
Br
37
36
15
-80
Br
37
36
20
-50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T
C
= 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
-120
-100
-80
-60
-40
-20
0
0
10
15
20
25
5
V
D
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
V
GS
(V)
-300
-100
-10
L
DRAIN SUPPLY (V)
-1000
ILM = 10A
300A
1E-4
1E-5
1E-6
-30
100A
30A
1E-3
1E-7
JANSR2N7440
相關PDF資料 |
PDF描述 |
|---|---|
| JANSR2N7426 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| JANSR2N7391 | TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A) |
| JANSR2N7464T2 | 30V N-Channel PowerTrench MOSFET |
| JANSR2N7472U2 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) |
| JANSR2N7473U2 | RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| JANSR2N7423U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSR2N7424 | 制造商:International Rectifier 功能描述:TRAMSISTOR - Rail/Tube |
| JANSR2N7424U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSR2N7425 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 35A 3PIN TO-254AA - Rail/Tube |
| JANSR2N7425/SLDC | 制造商:International Rectifier 功能描述:SPACE PART SINGLE LOT DATECODE CHARGE - Virtual or Non-Physical Inventory (Software & Literature) |
發(fā)布緊急采購，3分鐘左右您將得到回復。