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參數(shù)資料
| 型號： | JANSR2N7400 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET |
| 中文描述： | 8 A, 200 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封裝： | HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 71K |
| 代理商： | JANSR2N7400 |
4
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. TYPICAL NORMALIZEDr
DS(ON)
vsJUNCTION
TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Performance Curves
(Continued)
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
100
50
0
-50
0
2
4
10
8
6
12
10
1
0.1
I
D
,
-10
-100
100
μ
s
10ms
100ms
1ms
-
300
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
-1
T
C
= 25
o
C
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
CHARGE
Q
GD
Q
G
V
G
Q
GS
-12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= -12V, I
D
= 6A
N
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
0.001
0.01
0.1
10
T
θ
J
)
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
0.5
0.02
0.01
0.1
0.05
0.2
JANSR2N7440
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