- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384552 > JANSR2N7394 (International Rectifier) HEXFET Transistor(HEXFET 晶體管) PDF資料下載
參數(shù)資料
| 型號： | JANSR2N7394 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 129K |
| 代理商： | JANSR2N7394 |
IRHM7054, IRHM8054 Devices
Pre-Irradiation
8
www.irf.com
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = 25V, Starting TJ = 25°C,
EAS = [0.5 * L * (IL
Peak IL = 35A, VGS = 12V, 25
≤
RG
≤
200
ISD
≤
35A, di/dt
≤
220A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested RG = 2.35
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
2
) ]
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019, condition A.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
All Pre-Radiation and Post-Radiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions — TO-254AA
3.78 ( .149 )
3.53 ( .139 )
-A-
13.84 ( .545 )
13.59 ( .535 )
6.60 ( .260 )
6.32 ( .249 )
20.32 ( .800 )
20.07 ( .790 )
13.84 ( .545 )
13.59 ( .535 )
-C-
1.14 ( .045 )
0.89 ( .035 )
3.81 ( .150 )
1.27 ( .050 )
1.02 ( .040 )
-B-
.12 ( .005 )
3X
2X
3.81 ( .150 )
1 2 3
17.40 ( .685 )
16.89 ( .665 )
31.40 ( 1.235 )
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS ( INCHES ).
Conforms to JEDEC Outline TO-254AA
Dimensions in Millimeters and ( Inches )
.50 ( .020 ) M C A M B
.25 ( .010 ) M C
LEGEND
1 - COLLECTOR
2 - EMITTER
3 - GATE
W
LEGEND
1- DRAIN
2- SOURCE
3- GATE
LEGEND
1- DRAIN
2- SOURCE
3- GATE
1 2 3
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted,
machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 10/98
相關PDF資料 |
PDF描述 |
|---|---|
| JANSH2N7431U | HEXFET Transistor(HEXFET 晶體管) |
| JANSR2N7431U | HEXFET Transistor(HEXFET 晶體管) |
| JANSR2N7261 | HEXFET Transistor(HEXFET MOS場效應管) |
| JANSR2N7262 | HEXFET Transistor(HEXFET MOS場效應管) |
| JANSR2N7269 | Radiation Hardened Power MOSFET(功率MOS場效應管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| JANSR2N7394U | 制造商:International Rectifier 功能描述:TRAN 100V 100K RAD - Rail/Tube |
| JANSR2N7396 | 制造商:Microwave Semiconductor 功能描述: |
| JANSR2N7399 | 制造商:Harris Corporation 功能描述: |
| JANSR2N7422 | 制造商:International Rectifier 功能描述: |
| JANSR2N7422U | 制造商:International Rectifier 功能描述:TRAN 100V 100K RAD - Rail/Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。