- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384552 > JANSR2N7381 (International Rectifier) HEXFET Transistor(HEXFET 晶體管) PDF資料下載
參數(shù)資料
| 型號： | JANSR2N7381 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 123K |
| 代理商： | JANSR2N7381 |
IRHY7230CM, IRHY8230CM, JANSR-, JANSH-, 2N7381 Devices
Pre-Radiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
200
—
Typ
—
0.23
Max Units
—
—
Test Conditions
VGS = 0 V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
2.0
2.5
—
—
—
—
—
—
—
—
0.40
0.49
4.0
—
25
250
VGS = 12V, ID = 6.0A
VGS = 12V, ID = 9.4A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 6.0A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 9.4A
VDS = Max Rating x 0.5
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
50
10
25
35
75
70
60
—
nC
VDD = 100V, ID = 9.4A,
RG = 7.5
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
250
63
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
Measured from drain lead,
6mm (0.25 in) from package
to center of die.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Modified MOSFET symbol show-
ing the internal inductances.
μ
A
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
9.4
37
Test Conditions
—
—
Modified MOSFET symbol showing the integra
rverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.4
460
2.4
V
ns
μ
C
T
j
= 25°C, IS = 9.4A, VGS = 0V
Tj = 25°C, IF = 9.4A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
1.67
K/W
RthJA
Junction-to-Ambient
—
—
80
Typical socket mount
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANSH2N7394U | HEXFET Transistor(HEXFET 晶體管) |
| JANSR2N7394U | HEXFET Transistor(HEXFET 晶體管) |
| JANSH2N7394 | HEXFET Transistor(HEXFET 晶體管) |
| JANSR2N7394 | HEXFET Transistor(HEXFET 晶體管) |
| JANSH2N7431U | HEXFET Transistor(HEXFET 晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANSR2N7382 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 11A 3PIN TO-257 - Rail/Tube 制造商:Microsemi Corporation 功能描述:RADIATION HARDENED N-CHANNEL MOSFET - Waffle Pack |
| JANSR2N7382U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSR2N7383 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSR2N7389 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 6.5A 3PIN TO-39 - Rail/Tube 制造商:Microsemi Corporation 功能描述:RADIATION HARDENED N-CHANNEL MOSFET - Waffle Pack |
| JANSR2N7389U | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 6.5A 18PIN LCC - Rail/Tube 制造商:Microsemi Corporation 功能描述:RADIATION HARDENED N-CHANNEL MOSFET - Waffle Pack |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。