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參數(shù)資料
| 型號： | JANSR2N7270 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 311K |
| 代理商： | JANSR2N7270 |
IRHM7450, IRHM8450, JANSR-, JANSH-, 2N7270 Devices
12
www.irf.com
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
VDD = 25V, Starting TJ = 25°C,
Peak IL = 11A, L
≥
7.4mH, RG=25
ISD
≤
11A, di/dt
≤
140A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested RG =2.35
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, codition A.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-irradiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019, condition A.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
All Pre-Irradiation and Post-Irradiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
Pre-Irradiation
See Figures 18 through 31 for pre-irradiation
curves
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 2/99
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted
machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
Case Outline and Dimensions — TO-254AA
3.78 ( .149 )
3.53 ( .139 )
-A-
13.84 ( .545 )
13.59 ( .535 )
6.60 ( .260 )
6.32 ( .249 )
20.32 ( .800 )
20.07 ( .790 )
13.84 ( .545 )
13.59 ( .535 )
-C-
1.14 ( .045 )
3.81 ( .150 )
1.27 ( .050 )
1.02 ( .040 )
-B-
.12 ( .005 )
3X
2X
3.81 ( .150 )
1 2 3
17.40 ( .685 )
16.89 ( .665 )
31.40 ( 1.235 )
30.39 ( 1.199 )
NOTES:
1. DIMENSIO NING & TOLERANCING PER ANSI Y14.5M, 1982.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS ( INCHES ).
Conforms to JEDEC Outline TO-254AA
Dimensions in Millimeters and ( Inches )
.50 ( .020 ) M C A M B
.25 ( .010 ) M C
LEGEND
1 - COLLECTOR
2 - EMITTER
3 - GA TE
W
LEGEND
1- DRAIN
2- SOURCE
3- GATE
LEGEND
1- DRAIN
2- SOURCE
3- GATE
1 2 3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANSR2N7270U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
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| JANSR2N7380 | 制造商:International Rectifier 功能描述:TRANSISTOR, HEXFE N CHANNEL - Rail/Tube 制造商:Microsemi Corporation 功能描述: |
| JANSR2N7380U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSR2N7381 | 制造商:International Rectifier 功能描述:200V 100KRAD HI-REL SINGLE N-CHANNEL TID HARDENED - Rail/Tube |
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