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參數(shù)資料
| 型號： | JANSH2N7495U5 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝（持有LCC - 18） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 135K |
| 代理商： | JANSH2N7495U5 |
www.irf.com
3
Radiation Characteristics
IRHE57034, JANSR2N7495U5
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 500K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 60 — 60 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 25 μA V
DS
= 48V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.034 — 0.043
V
GS
= 12V, I
D
=7.4A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.08 — 0.1
V
GS
= 12V, I
D
=7.4A
On-State Resistance (LCC-18)
V
SD
Diode Forward Voltage
— 1.8 — 1.8 V V
GS
= 0V, IS = 11.7A
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHE57064 (JANSR2N7495U5), IRHE53064 (JANSF2N7495U5) and IRHE54064 (JANSH2N7495U5)
2. Part number IRHE58064 (JANSH2N7495U5)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Fig a.
Single Event Effect, Safe Operating Area
Table 2. Single Event Effect Safe Operating Area
Ion
(MeV/(mg/cm
2
)) (MeV) (μm)
@V
GS
=0V @V
GS
= -5V @V
GS
= -10V @V
GS
=-15V @V
GS
=-20V
Br
37.3
285 36.8 60 60 60 60 40
Xe
63
300 29 46 46 35 25 15
Au
86.6
2068 106 35 35 27
LET
Energy Range
V
DS
(V)
20
14
0
10
20
30
40
50
60
70
-20
-15
-10
-5
0
VGS
V
Br
Xe
Au
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