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參數(shù)資料
| 型號(hào)： | JANSH2N7470T1 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（低阻值到254AA） |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 182K |
| 代理商： | JANSH2N7470T1 |
IRHMS57064, JANSR2N7470T1
Pre-Irradiation
2
www.irf.com
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
VSD
trr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
45*
180
1.2
170
760
V
ns
nC
T
j
= 25°C, IS = 45A, VGS = 0V
Tj = 25°C, IF = 45A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
—
—
—
—
0.21
—
0.60
—
48
°C/W
Typical socket mount
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
—
Typ
—
0.067
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.0066
VGS = 12V, ID = 45A
2.0
42
—
—
—
—
—
—
4.0
—
10
25
V
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 45A
VDS = 48V ,VGS = 0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 45A
VDS = 30V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
150
75
50
35
125
60
50
— nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
nC
VDD = 30V, ID = 45A
VGS =12V, RG = 2.35
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Internal Gate Resistance
—
—
—
—
5640
2410
105
1.04
—
—
—
—
f = 1.0MHz, open drain
VGS = 0V, VDS = 25V
f = 100KHz
pF
nA
ns
μ
A
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
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