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參數(shù)資料
| 型號(hào)： | JANSG2N7482T3 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（對(duì)257AA） |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大?。?/td> | 143K |
| 代理商： | JANSG2N7482T3 |
IRHY57Z30CM, JANSR2N7482T3
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
24 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 15V, starting TJ = 25°C, L= 1.0mH
Peak IL = 18A, VGS = 12V
ISD
≤
18A, di/dt
≤
54A/
μ
s,
VDD
≤
30V, TJ
≤
150°C
Footnotes:
Case Outline and Dimensions — TO-257AA
!
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER :
205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 04/2006
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
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