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參數(shù)資料
| 型號(hào)： | JANSG2N7480U3 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 0.5） |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 189K |
| 代理商： | JANSG2N7480U3 |
www.irf.com
5
Pre-Irradiation
IRHNJ57034, JANSR2N7480U3
!
!
"
""
#$
1
10
100
0
500
1000
1500
2000
2500
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
rss
C
oss
C
iss
0
10
20
30
40
0
5
10
15
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
22A
V
= 12V
DS
V
= 30V
DS
V
= 48V
DS
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
ID
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μs
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