- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384552 > JANSF2N7494U5 (International Rectifier) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) PDF資料下載
參數(shù)資料
| 型號： | JANSF2N7494U5 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝（持有LCC - 18） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 143K |
| 代理商： | JANSF2N7494U5 |
IRHE57Z30, JANSR2N7495U5
Pre-Irradiation
2
www.irf.com
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
12*
48
1.8
102
196
Test Conditions
—
—
—
—
—
V
ns
nC
T
j
= 25°C, IS = 12A, VGS = 0V
Tj = 25°C, IF = 12A, di/dt
≤
100A/
μ
s
VDD
≤
25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
30
—
Typ
—
0.025
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.07
VGS = 12V, ID = 8.0A
2.0
8.0
—
—
—
—
—
—
4.0
—
10
25
V
VDS = VGS, ID = 1.0mA
VDS
≥
15V, IDS = 8.0A
VDS= 24V ,VGS=0V
VDS = 24V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 12A
VDS = 15V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
65
20
10
25
100
35
30
—
nC
VDD = 15V, ID = 12A
VGS =12V, RG = 7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2184
940
35
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
Measured from the center of
drain pad to center of source pad
Note: Corresponding Spice and Saber models are available on International Rectifier web site.
For footnotes refer to the last page
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJPCB
Junction-to-PC Board
Min Typ Max
—
—
— — 19
Units
Test Conditions
5.0
Solder to a copper clad PC Board
°C/W
* Current is limited by package
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANSG2N7494U5 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| JANSH2N7494U5 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| JANSR2N7494U5 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| JANSF2N7495U5 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| JANSG2N7495U5 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANSF2N7495U5 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7498T2 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7499T2 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7500U5 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7503U8 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。