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參數資料
| 型號： | JANSF2N7471T1 |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 173K |
| 代理商： | JANSF2N7471T1 |
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
45*
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
45*
IDM
Pulsed Drain Current
180
PD @ TC = 25°C
Max. Power Dissipation
208
W
Linear Derating Factor
1.67
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
493
mJ
IAR
Avalanche Current
45
A
EAR
Repetitive Avalanche Energy
20.8
mJ
dv/dt
Peak Diode Recovery dv/dt
6.7
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. /1.6 mm from case for 10s)
Weight
9.3 (Typical)
g
oC
A
07/24/06
www.irf.com
1
* Current is limited by package
For footnotes refer to the last page
Pre-Irradiation
TO-254AA
Low-Ohmic
Features:
n Low RDS(on)
n Fast Switching
n
Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n Ceramic Eyelets
n
Electrically Isolated
n Light Weight
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
IRHMS57160
RADIATION HARDENED
JANSR2N7471T1
POWER MOSFET
100V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
REF: MIL-PRF-19500/698
TECHNOLOGY
55
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHMS57160
100K Rads (Si)
0.013
45A* JANSR2N7471T1
IRHMS53160
300K Rads (Si)
0.013
45A* JANSF2N7471T1
IRHMS54160
500K Rads (Si)
0.013
45A* JANSG2N7471T1
IRHMS58160 1000K Rads (Si)
0.013
45A* JANSH2N7471T1
PD-95889B
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