參數(shù)資料
型號： JANS1N6640US
廠商： MICROSEMI CORP
元件分類： 參考電壓二極管
英文描述： SWITCHING DIODES
中文描述： 0.3 A, SILICON, SIGNAL DIODE
封裝： SURFACE MOUNT PACKAGE-2
文件頁數(shù)： 1/2頁
文件大?。?/td> 52K
代理商： JANS1N6640US
V F
@
I F
TYPES
VdC
mA
MIN
MAX
(PULSED)
1N6639US
–
1.20
500
0.54
0.62
1
1N6640US
0.76
0.86
50
0.82
0.92
100
0.87
1.00
200
1N6641US
–
1.10
200
159
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
FAX (781) 689-0803
V BRR
@ 10 μA
V RWM
I R1
I R2
T FR
IF
= 200 mA
T RR
CT
TYPES
@ TA= +25
°C
@ TA= +150
°C
VR=
V RWM
I R = 10 mA
I F = 10 mA
RL= 100
VR= 0
VR=
V RWM
V(pk)
V(pk)
nA dc
μA dc
ns
ns
pF
1N6639US
1N6640US
1N6641US
100
75
75
75
50
50
100
100
100
100
100
100
10
10
10
4.0
4.0
5.0
2.5
2.5
3.0
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 4.6 mA/°C Above TEC = + 110°C
Surge Current: I
FSM
= 2.5A, Pw= 8.3ms
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specied.
FORWARD VOLTAGE:
1N6639US THRU 1N6641US AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/609
SWITCHING DIODES
NON-CAVITY GLASS PACKAGE
METALLURGICALLY BONDED
1N6639US
1N6640US
1N6641US
DESIGN DATA
CASE:
D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/609
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (
ROJEC):
50 °C/W maximum at L = 0
THERMAL IMPEDANCE: (
ZOJX): 25
°C/W maximum
POLARITY:
Cathode end is banded
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS
MIN MAX
1.78
0.48
4.19
0.08MIN.
INCHES
MIN MAX
0.070 0.085
0.019 0.028
0.165 0.195
0.003MIN.
DIM
D
F
G
S
2.16
0.71
4.95
FIGURE 1
相關(guān)PDF資料
PDF描述
JANS1N6641US SWITCHING DIODES
JANTX1N6641US 16-bit edge triggered D-type flip-flop with 5 V tolerant inputs/outputs; 3-state - Description: 3.3V 16-Bit D-Type Flip-Flop; Postive-Edge Trigger; with Bus Hold (3-State) ; F<sub>max</sub>: 150 MHz; Logic switching levels: TTL ; Number of pins: 48 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 3.8@3.3 V ns; Voltage: 1.2-3.6
JAN1N6639US SWITCHING DIODES
JANTX1N6639US SWITCHING DIODES
JANTXV1N6639US SWITCHING DIODES
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANS1N6640US/T/R 制造商:Microsemi Corporation 功能描述:SIGNAL OR COMPUTER DIODE - Tape and Reel
JANS1N6641 制造商:Microsemi Corporation 功能描述:SIGNAL OR COMPUTER DIODE - Waffle Pack
JANS1N6641US 制造商:Microsemi Corporation 功能描述:SIGNAL OR COMPUTER DIODE - Waffle Pack
JANS1N6642 制造商:Microsemi Corporation 功能描述:Diode Switching 100V 0.3A 2-Pin Case D 制造商:Microsemi Corporation 功能描述:SIGNAL OR COMPUTER DIODE - Waffle Pack
JANS1N6642U 制造商:Microsemi Corporation 功能描述:Diode Switching 75V 0.3A 2-Pin B-MELF 制造商:Microsemi Corporation 功能描述:JANS1N6642US - Waffle Pack 制造商:Microsemi Corporation 功能描述:JANS1N6642U - Waffle Pack
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