參數(shù)資料
型號(hào)： JANS1N6490US
廠商： MICROSEMI CORP-LAWRENCE
元件分類： 參考電壓二極管
英文描述： Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
中文描述： 5.1 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封裝： HERMETIC SEALED, GLASS, D-5A, 2 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 130K
代理商： JANS1N6490US
DESIGN DATA
CASE:
D-5A, hermetically sealed glass
case, per MIL-PRF- 19500/406
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (
ROJEC):
20 °C/W maximum at L = 0
THERMAL IMPEDANCE: (
ZOJX): 4.5
°C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS
MIN MAX
2.31
0.48
4.28
0.08MIN.
INCHES
MIN MAX
0.091 0.103
0.019 0.028
0.168 0.200
0.003MIN.
DIM
D
F
G
S
2.62
0.71
5.08
FIGURE 1
153
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
FAX (781) 689-0803
AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/406
1.5 WATT ZENER DIODES
NON CAVITY CONSTRUCTION
METALLURGICALLY BONDED
1N6485US
THRU
1N6491US
AND
1N4460US
AND
1N4461US
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +200°C
Power Dissapation: 1.5W @ TA=+25°C
Power Derating: 10mW/°C above TA=+25°C
Forward Voltage: 1.0V dc @ IF=200mA dc
1.5 V dc @ IF=1A dc
ZENER
VOLTAGE CURRENT IMPEDENCE IMPEDENCE CURRENT CURRENT VOLTAGE CURRENT
(NOM.)
IZT
±5%
ZZT@IZT
VOLTS
mA
OHMS
OHMS
3.3
76.0
10
400
3.6
69.0
10
400
3.9
64.0
9
400
4.3
58.0
9
400
4.7
53.0
8
500
5.1
49.0
7
500
5.6
45.0
5
600
6.2
40.0
4
200
6.8
37.0
2.5
200
TEST
DYNAMIC
KNEE
TEST
REVERSE
TEST
MAXIMUM VZ
(REG)
MAXIMUM
V
V
IZM
SURGE
TYPE
(MAX.)
(MAX.)
ZZK@IZT
IZK
(MAX.)
IR@VR
μ
A
50
50
35
5.0
4.0
1.0
0.5
10.0
5.0
VR
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
VOLTS
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.72
4.08
MA
433
397
366
332
304
280
255
230
210
VOLTS
.90
.80
.75
.70
.60
.50
.40
.35
.30
AMPS
4.2
3.9
3.6
3.3
3.0
2.7
2.5
2.3
2.1
1N6485US
1N6486US
1N6487US
1N6488US
1N6489US
1N6490US
1N6491US
1N4460US
1N4461US
相關(guān)PDF資料
PDF描述
JANS1N4460US Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
JAN1N4460 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
JAN1N4461 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
JAN1N6485 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
JAN1N6486 Single Output LDO, 150mA, Fixed(10.0V), Low Quiescent Current, 60V Load Dump Protection 8-SOIC 0 to 125
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANS1N6491 制造商:Microsemi Corporation 功能描述:Diode 600V 0.4A 2-Pin DO-35 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE - Waffle Pack
JANS1N6491CUS 功能描述:Zener Diode 5.6V 1.5W ±2% Through Hole D-5A 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/406 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標(biāo)稱值）（Vz）:5.6V 容差:±2% 功率 - 最大值:1.5W 阻抗（最大值）（Zzt）:5 歐姆 不同?Vr 時(shí)的電流 - 反向漏電流:500nA @ 2V 不同 If 時(shí)的電壓 - 正向（Vf）:1.5V @ 1A 工作溫度:-65°C ~ 175°C 安裝類型:通孔 封裝/外殼:SQ-MELF，A 供應(yīng)商器件封裝:D-5A 標(biāo)準(zhǔn)包裝:1
JANS1N6491US 制造商:Microsemi Corporation 功能描述:Diode Zener Single 5.6V 5% 1.5W 2-Pin A-MELF 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE - Waffle Pack
JANS1N6621 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE - Waffle Pack
JANS1N6632 制造商:Microsemi Corporation 功能描述:Diode Zener Single 3.3V 5% 5W 2-Pin Case E 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE - Waffle Pack
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