參數(shù)資料
型號(hào)： JANS1N6485US
廠商： MICROSEMI CORP-SCOTTSDALE
元件分類： 參考電壓二極管
英文描述： Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode
中文描述： 3.3 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封裝： HERMETIC SEALED, GLASS, D-5A, 2 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 130K
代理商： JANS1N6485US
DESIGN DATA
CASE:
D-5A, hermetically sealed glass
case, per MIL-PRF- 19500/406
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (
ROJEC):
20 °C/W maximum at L = 0
THERMAL IMPEDANCE: (
ZOJX): 4.5
°C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS
MIN MAX
2.31
0.48
4.28
0.08MIN.
INCHES
MIN MAX
0.091 0.103
0.019 0.028
0.168 0.200
0.003MIN.
DIM
D
F
G
S
2.62
0.71
5.08
FIGURE 1
153
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
FAX (781) 689-0803
AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/406
1.5 WATT ZENER DIODES
NON CAVITY CONSTRUCTION
METALLURGICALLY BONDED
1N6485US
THRU
1N6491US
AND
1N4460US
AND
1N4461US
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +200°C
Power Dissapation: 1.5W @ TA=+25°C
Power Derating: 10mW/°C above TA=+25°C
Forward Voltage: 1.0V dc @ IF=200mA dc
1.5 V dc @ IF=1A dc
ZENER
VOLTAGE CURRENT IMPEDENCE IMPEDENCE CURRENT CURRENT VOLTAGE CURRENT
(NOM.)
IZT
±5%
ZZT@IZT
VOLTS
mA
OHMS
OHMS
3.3
76.0
10
400
3.6
69.0
10
400
3.9
64.0
9
400
4.3
58.0
9
400
4.7
53.0
8
500
5.1
49.0
7
500
5.6
45.0
5
600
6.2
40.0
4
200
6.8
37.0
2.5
200
TEST
DYNAMIC
KNEE
TEST
REVERSE
TEST
MAXIMUM VZ
(REG)
MAXIMUM
V
V
IZM
SURGE
TYPE
(MAX.)
(MAX.)
ZZK@IZT
IZK
(MAX.)
IR@VR
μ
A
50
50
35
5.0
4.0
1.0
0.5
10.0
5.0
VR
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
VOLTS
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.72
4.08
MA
433
397
366
332
304
280
255
230
210
VOLTS
.90
.80
.75
.70
.60
.50
.40
.35
.30
AMPS
4.2
3.9
3.6
3.3
3.0
2.7
2.5
2.3
2.1
1N6485US
1N6486US
1N6487US
1N6488US
1N6489US
1N6490US
1N6491US
1N4460US
1N4461US
相關(guān)PDF資料
PDF描述
JANS1N6491US IGBT Module; Continuous Collector Current, Ic:300A; Collector Emitter Saturation Voltage, Vce(sat):3.4V; Power Dissipation, Pd:2100W; Collector Current:300A; Collector Emitter Voltage, Vceo:1.2kV; Leaded Process Compatible:No RoHS Compliant: No
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANS1N6486 制造商:Microsemi Corporation 功能描述:Diode Zener Single 3.6V 5% 1.5W 2-Pin Case A 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE - Waffle Pack
JANS1N6486US 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE - Waffle Pack
JANS1N6487 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE - Waffle Pack
JANS1N6487US 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE - Waffle Pack
JANS1N6488 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE - Waffle Pack
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