參數資料
型號： JANS1N6077
廠商： MICROSEMI CORP-LAWRENCE
元件分類： 整流器
英文描述： 6 A, SILICON, RECTIFIER DIODE
封裝： HERMETIC SEALED, GLASS, E, 2 PIN
文件頁數： 2/3頁
文件大?。?/td> 352K
代理商： JANS1N6077
VOIDLESS HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
POWER RECTIFIERS
SCOTTSD A L E DIVISION
1N6073 thru 1N6081
W
.Mi
cr
os
em
i
.C
O
M
1N6073
thru
1N6081
ELECTRICAL CHARACTERISTICS @ 25oC unless otherwise specified
MAXIMUM
FORWARD
VOLTAGE
(PULSED)
PULSED
TEST
CURRENT
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
VF
@
IF
AVERAGE
RECTIFIED
CURRENT IO
@ TL = 70C
AVERAGE
RECTIFIED
CURRENT IO
@ TA = 55C
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
MAXIMUM
REVERSE
RECOVERY
TIME*
trr
MAXIMUM
SURGE
CURRENT
IFSM
VOLTS
AMPS
A
ns
AMPS
1N6073
50
2.04
9.4
3.0
0.85
1.0
30
35
1N6074
100
2.04
9.4
3.0
0.85
1.0
30
35
1N6075
150
2.04
9.4
3.0
0.85
1.0
30
35
1N6076
50
1.76
18.8
6.0
1.3
5.0
30
75
1N6077
100
1.76
18.8
6.0
1.3
5.0
30
75
1N6078
150
1.76
18.8
6.0
1.3
5.0
30
75
1N6079
50
1.50
37.7
12.0
2.0
10.0
30
175
1N6080
100
1.50
37.7
12.0
2.0
10.0
30
175
1N6081
150
1.50
37.7
12.0
2.0
10.0
30
175
*NOTE: IF = 0.5 A, IRM = 1.0 A, and IR(REC) = 0.25 A
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
GRAPHS
MAXIMUM
P
O
W
ER
DISSIPATI
O
N
IN
W
ATTS
MAXIMUM
P
O
W
ER
DISSIPATI
O
N
IN
W
ATTS
MAXIMUM
P
O
W
ER
DISSIPATI
O
N
IN
W
ATTS
FIGURE 1
FIGURE 2
FIGURE 3
Maximum power in watts vs lead temperature
For 1N6079, 1N6080 and 1N6081
for 1N6076, 1N6077 and 1N6078
for 1N6073, 1N6074 and 1N6075
Maximum lead temperature in
oC (TL) at point “L” from body (for maximum operating junction temperature with equal two-lead conditions).
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2004
12-08-2004 REV A
相關PDF資料
PDF描述
JANS1N6078 6 A, SILICON, RECTIFIER DIODE
JANTX1N6078 6 A, SILICON, RECTIFIER DIODE
JAN1N6081 12 A, SILICON, RECTIFIER DIODE
JANTX1N6073 3 A, SILICON, RECTIFIER DIODE
JAN1N6079 12 A, SILICON, RECTIFIER DIODE
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