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參數(shù)資料
| 型號： | JANS1N5711-1 |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.033 A, SILICON, SIGNAL DIODE, DO-35 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 25K |
| 代理商： | JANS1N5711-1 |
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
CDI
MINIMUM
MAXIMUM
MAXIMUM REVERSE
MAXIMUM
ESDS
TYPE
BREAKDOWN
FORWARD
LEAKAGE CURRENT
CAPACITANCE @
CLASS
NUMBER
VOLTAGE
V
R
= 0 VOLTS
f = 1.0 MHZ
V
BR @ 10
AVF @ 1 mA
V
F
@ I
F
I
R
@ V
R
C
T
VOLTS
MILLIAMPS
nA
VOLTS
PICO FARADS
DSB2810
20
0.41
1.0@35
100
15
2.0
1
1N5711,-1
70
0.41
1.0@15
200
50
2.0
1
DSB5712
20
0.41
1.0@35
150
16
2.0
1
1N5712-1
20
0.41
1.0@35
150
16
2.0
1
1N6857-1
20
0.35
0.75@35
150
16
4.5
2
1N6858-1
70
0.36
0.65@15
200
50
4.5
2
NOTE:
Effective Minority Carrier Lifetime (
τ ) is 100 Pico Seconds
1N5711-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/444
1N5712-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/445
SCHOTTKY BARRIER DIODES
HERMETICALLY SEALED
METALLURGICALLY BONDED
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass case
per MIL-PRF-19500/444 and /445
DO-35 Outline
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC): 250
C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (ZOJX): 40
C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING POSITION: Any.
MAXIMUM RATINGS
Operating Temperature: -65°C to +150°C
Storage Temperature:
-65°C to +150°C
Operating Current: 5711 types
:33mA dc@ TL = +130°C, L = 3/8”
2810,5712 & 6858 types
:75mA dc@ TL = +110°C, L = 3/8”
6857 TYPE
:75mA dc@ TL = +70°C, L = 3/8”
Derating:
all types:
Derate to 0 (zero)mA@+150°C
1N5711
1N5711-1
1N5712-1
1N6857-1
1N6858-1
DSB2810
DSB5712
NOTICE:
Qualification testing to M, JX, and JS levels for 6857 and 6858 types is underway.
Contact the factory for qualification completion dates. These two part numbers are
being introduced by CDI as “drop-in” replacements for the 5711 and 5712. They
provide a more robust mechanical design and a higher ESDS class with the only
trade-off being an increase in capacitance.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JAN1N5711-1 | 0.033 A, SILICON, SIGNAL DIODE, DO-35 |
| JANS22GQ100 | 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-254AA |
| JANTXV22GQ100 | 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-254AA |
| JANTX22GQ100 | 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-254AA |
| JANTX1N4148-1 | 0.2 A, SILICON, SIGNAL DIODE, DO-35 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANS1N5711UB | 制造商:Microsemi Corporation 功能描述:SCHOTTKY RECTIFIER - Waffle Pack |
| JANS1N5711UBCA | 制造商:Microsemi Corporation 功能描述:SCHOTTKY RECTIFIER - Waffle Pack |
| JANS1N5711UBCC | 制造商:Microsemi Corporation 功能描述:SCHOTTKY RECTIFIER - Waffle Pack |
| JANS1N5711UBD | 制造商:Microsemi Corporation 功能描述:SCHOTTKY RECTIFIER - Bulk 制造商:Microsemi Corporation 功能描述:SCHOTTKY RECTIFIER - Waffle Pack |
| JANS1N5711UR-1 | 制造商:Microsemi Corporation 功能描述:SCHOTTKY 70V 0.033A 2PIN DO-213AA - Waffle Pack |
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