參數(shù)資料
型號: JANS1N5617US
廠商: MICROSEMI CORP
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 1 A, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 2/3頁
文件大?。?/td> 174K
代理商: JANS1N5617US
SURFACE MOUNT VOIDLESS-
HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5615US thru 1N5623US
1N5615US
1N5623US
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range
IO
Average Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave
input and a 180 degree conduction angle
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified decay point after a peak reverse
current occurs.
GRAPHS
FIGURE 1
FIGURE 2
TYPICAL REVERSE CURRENT vs VR
TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT
Microsemi
Scottsdale Division
Page 2
Copyright
2005
4-13-2005 REV C
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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