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參數(shù)資料
| 型號(hào)： | JANS1N5551US |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, SILICON, RECTIFIER DIODE |
| 封裝： | GLASS PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 289K |
| 代理商： | JANS1N5551US |
VOIDLESS HERMITICALLY SEALED
SURFACE MOUNT STANDARD
RECOVERY GLASS RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2004
9-14-2004 REV A
W
.Mi
cr
os
em
i
.C
O
M
SCOTTSD A L E DIVISION
1N5550US thru 1N5554US
1N
55
50
U
S
–
1N
55
54
U
S
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range excluding all transient voltages (ref JESD282-B).
IO
Average Rectified Output Current: Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and then a specified recovery decay point after a
peak reverse current occurs.
PACKAGE DIMENSIONS AND PAD LAYOUT
NOTE: This Package Outline has also previously
PAD LAYOUT
been identified as “D-5B”
INCHES
mm
A
0.288
7.32
B
0.070
1.78
C
0.155
3.94
Note: If mounting requires adhesive
separate from the solder, an additional
0.080 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
INCHES
mm
MIN
MAX
MIN
MAX
BL
.205
.225
5.21
5.72
BD
.137
.142
3.48
3.61
ECT
.019
.028
0.48
0.711
S
.003
---
0.08
---
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