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參數(shù)資料
| 型號(hào)： | JANHC1N5822 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, SILICON, RECTIFIER DIODE |
| 封裝： | DIE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 38K |
| 代理商： | JANHC1N5822 |
215
1N5822 AVAILABLE IN
JANHC AND JANKC PER MIL-PRF-19500/620
3 AMP SCHOTTKY BARRIER RECTIFIER CHIPS
SILICON DIOXIDE PASSIVATED
COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
MAXIMUM RATINGS
Operating Temperature: -65°C to +125°C
Storage Temperature: -65°C to +150°C
Average Rectied Forward Current: 3.0 AMP @ +55°C
Derating: 43 mA / °C above +55°C
WORKING PEAK
MAXIMUM REVERSE
CDI
REVERSE
MAXIMUM FORWARD VOLTAGE
LEAKAGE CURRENT
TYPE
VOLTAGE
AT RATED VOLTAGE
NUMBER
VRWM
VF@1.0A
VF@3.0A
I R@25°C
I R@100°C
VOLTS
mA
CD5820
20
0.45
0.55
0.10
12.5
CD5821
30
0.45
0.55
0.10
12.5
CD5822
40
0.45
0.55
0.10
12.5
JHC, JKC
40
0.40
0.50
0.10
12.5
5822
CD3A20
20
0.45
0.55
0.10
12.5
CD3A30
30
0.45
0.55
0.10
12.5
CD3A40
40
0.45
0.55
0.10
12.5
BACKSIDE IS CATHODE
FIGURE 1
DESIGN DATA
METALLIZATION:
Top: (Anode) .......................Al
Back:(Cathode) ..................Au
AL THICKNESS....... .........25,000
Min
GOLD THICKNESS... .........4,000
Min
CHIP THICKNESS............. .........10 Mils
TOLERANCES: ALL
Dimensions + 2 mils
CD5820
thru
CD5822
and
CD3A20
thru
CD3A40
64 MILS
64
MILS
53
MILS
6
LAKE
STREET,
LAWRENCE,
MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANKC1N5822 | 3 A, SILICON, RECTIFIER DIODE |
| JANHC1N5822 | 3 A, SILICON, RECTIFIER DIODE |
| JANKC1N5822 | 3 A, SILICON, RECTIFIER DIODE |
| JANHCA1N5819 | 1 A, 45 V, SILICON, SIGNAL DIODE |
| JANKCA1N5819 | 1 A, 45 V, SILICON, SIGNAL DIODE |
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參數(shù)描述 |
|---|---|
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