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參數(shù)資料
| 型號： | JAN4N24A |
| 廠商： | MICROPAC INDUSTRIES INC |
| 元件分類： | 光電耦合器 |
| 英文描述： | S Series/ Female |
| 中文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | HERMETIC SEALED, METAL PACKAGE-6 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 88K |
| 代理商： | JAN4N24A |
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION
725 E. Walnut St., Garland, TX 75040
(972) 272-3571
Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@microropac.com
3 - 11
4N22A, 4N23A, and 4N24A
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
*
ELECTRICAL CHARACTERISTICS INPUT LED
T
A
= 25
°
C Unless otherwise specified
PARAMETER
Input Diode Static Reverse Current
Input Diode Static Forward Voltage
-55
°
C
+25
°
C
+125
°
C
SYMBOL
I
R
MIN
MAX
100
1.5
1.3
1.2
UNITS
μA
TEST CONDITIONS
V
R
= 2V
NOTE
V
F
1
0.8
0.7
V
I
F
= 10mA
*
OUTPUT TRANSISTOR
T
A
= 25
°
C Unless otherwise specified
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
MIN
35
35
4
MAX
UNITS
V
V
V
TEST CONDITIONS
I
C
= 100
μ
A, I
B
= 0, I
F
= 0
I
C
= 1mA, I
B
= 0, I
F
= 0
I
C
= 0, I
E
= 100
μ
A, I
F
= 0
NOTE
*
COUPLED CHARACTERISTICS
T
A
= 25
°
C Unless otherwise specified
PARAMETER
On State Collector Current 4N22A
SYMBOL
MIN
0.15
0.2
0.4
2.5
6
10
1
2.5
4
1
2.5
4
MAX
UNITS
mA
TEST CONDITIONS
V
CE
= 5V, I
B
= 0, I
F
= 2mA
NOTE
4N23A
4N24A
I
C(ON)
On State Collector Current 4N22A
4N23A
4N24A
I
C(ON)
mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
On State Collector Current 4N22A
-55
°
C 4N23A
4N24A
I
C(ON)
mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
On State Collector Current 4N22A
+100
°
C 4N23A
4N24A
I
C(ON)
mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
Off State Collector Current +25
°
C
Off State Collector Current +100
°
C
I
C(OFF)
I
C(OFF)
100
nA
V
CE
= 20V, I
B
= 0, I
F
= 0mA
V
CE
= 20V, I
B
= 0, I
F
= 0mA
100
μ
A
Collector-Emitter Saturation Voltage 4N22A
4N23A
4N24A
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
0.3
0.3
0.3
V
V
V
I
C
= 2.5mA, I
B
= 0, I
F
= 20mA
I
C
= 5mA, I
B
= 0, I
F
= 20mA
I
C
= 10mA, I
B
= 0, I
F
= 20mA
Input to Output Resistance
R
I-O
10
11
V
IN-OUT
= 1kV
1
Input to Output Capacitance
C
I-O
5
pF
F = 1MHz, V
IN-OUT
= 1kV
1
Rise Time 4N22A
4N23A
4N24A
t
r
t
r
t
r
t
f
t
f
t
f
15
15
20
15
15
20
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
V
CC
= 10V, I
F
= 10mA, R
L
= 100
Fall Time 4N22A
4N23A
4N24A
V
CC
=10V, I
F
= 10mA, R
L
= 100
NOTES:
1.
These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
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