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參數(shù)資料
| 型號(hào)： | JAN2N7371 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP DARLINGTON HIGH POWER SILICON TRANSISTOR |
| 中文描述： | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-254AA |
| 封裝： | TO-254, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 52K |
| 代理商： | JAN2N7371 |
TECHNICAL DATA
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 623
Devices
Qualified Level
2N7371
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Value
100
100
5.0
0.2
12
100
-65 to +175
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ T
C
= +25
0
C
(1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1)
Derate linearly 0.667 W/
0
C above T
C
> +25
0
C
Symbol
R
θ
JC
Max.
1.5
Unit
0
C/W
TO-254AA*
*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Cutoff Current
V
CE
= 50 Vdc
Collector-Emitter Cutoff Current
V
CE
= 100 Vdc, V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
Symbol
Min.
Max.
Unit
V
CEO
(
sus
)
I
CEO
I
CEX
I
EBO
100
Vdc
mAdc
mAdc
mAdc
1.0
0.5
2.0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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