- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383205 > JAN2N5039 (MICROSEMI CORP-LAWRENCE) NPN HIGH POWER SILICON TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | JAN2N5039 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN HIGH POWER SILICON TRANSISTOR |
| 中文描述： | 20 A, 75 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | SIMILAR TO TO-3, 2 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 55K |
| 代理商： | JAN2N5039 |
2N5038, 2N5039, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 0.5 Adc, V
CE
= 5.0 Vdc
I
C
= 2.0 Adc, V
CE
= 5.0 Vdc
I
C
= 12 Adc, V
CE
= 5.0 Vdc
I
C
= 10 Adc, V
CE
= 5.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 12 Adc, I
B
= 1.2 Adc
I
C
= 10 Adc, I
B
= 1.0 Adc
I
C
= 20 Adc, I
B
= 5.0 Adc
Base-Emitter Saturation Voltage
I
C
= 20 Adc, I
B
= 5.0 Adc
Base-Emitter Voltage
I
C
= 12 Adc, V
CE
= 5.0 Vdc
I
C
= 10 Adc, V
CE
= 5.0 Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 2.0 Adc, V
CE
= 10 Vdc, f = 5.0 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30
±
2 Vdc; I
C
= 12 Adc; I
B1
=
1.2 Adc
V
CC
= 30
±
2 Vdc; I
C
= 10 Adc; I
B1
=
1.0 Adc
Turn-Off Time
V
CC
= 30
±
2 Vdc; I
C
= 12 Adc; I
B1
= -
I
B2
=
1.2 Adc
V
CC
= 30
±
2 Vdc; I
C
= 10 Adc; I
B1
= -
I
B2
=
1.0 Adc
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 28 Vdc, I
C
= 5.0 Adc
Test 2
V
CE
= 45 Vdc, I
C
= 0.9 Adc
Test 3
V
CE
= 7.0 Vdc, I
C
= 20 Adc
Test 4
V
CE
= 90 Vdc, I
C
= 0.23 Adc
Test 4
V
CE
= 75 Vdc, I
C
= 0.32 Adc
(2) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
2N5038
2N5039
2N5038
2N5039
2N5038
2N5039
h
FE
50
30
50
30
15
15
200
150
2N5038
2N5039
Both
V
CE(sat)
1.0
1.0
2.5
3.3
1.8
1.8
Vdc
V
BE(sat)
Vdc
2N5038
2N5039
V
BE
Vdc
h
FE
12
48
C
obo
500
pF
2N5038
2N5039
t
on
0.5
μ
s
2N5038
2N5039
t
off
2.0
μ
s
2N5038
2N5039
120101
Page 2 of 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JAN469-1 | RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 10 AMP, Military Approved |
| JANTX469-1 | RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 10 AMP, Military Approved |
| JAN469-2 | RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 10 AMP, Military Approved |
| JANTX469-2 | RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 10 AMP, Military Approved |
| JAN469-3 | RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 10 AMP, Military Approved |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JAN2N5109 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 20V 0.4A 3PIN TO-39 - Bulk |
| JAN2N5109UB | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 3-Pin UB 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack 制造商:Microsemi 功能描述:Trans GP BJT NPN 3-Pin UB |
| JAN2N5114 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:P-CHANNEL J-FET |
| JAN2N5115 | 制造商:Solitron Devices Inc 功能描述:JAN QPL LOW POWER FIELD EFFECT TRANSISTORS 制造商:Vishay Siliconix 功能描述: |
| JAN2N5116 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:P-CHANNEL J-FET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。