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參數(shù)資料
| 型號(hào)： | JAN2N4416A |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | N-CHANNEL J-FET |
| 中文描述： | 35 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72 |
| 封裝： | TO-72, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | JAN2N4416A |
TECHNICAL DATA
N-CHANNEL J -FET
Qualified per MIL-PRF-19500/ 428
Devices
Qualified Level
2N4416A
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
Parameters / Test Conditions
Symbol
2N4416A
-35
35
35
10
300
-65 to +200
Unit
Gate-Source Voltage
Drain-Source Voltage
Drain-Gate Voltage
Gate Current
Power Dissipation
Operating Junction & Storage Temperature Range
(1) Derate linearly 1.7 mW/
0
C for T
A
> +25
0
C.
V
GS
V
DS
V
DG
I
G
P
T
T
op
, T
stg
Vdc
Vdc
Vdc
mAdc
mWdc
0
C
T
A
= +25
0
C
(1)
TO-72*
(TO-206AF)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= +25
0
C unless otherwise noted)
Parameters / Test Conditions
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= 1.0
μ
Adc
Gate Reverse Current
V
DS
= 0, V
GS
= 20 Vdc
Drain Current
V
DS
= 15 Vdc
Gate-Source Voltage
V
DS
= 15 Vdc, I
D
= 0.5 mAdc
Gate-Source Cutoff Voltage
V
DS
= 15 Vdc, I
D
= 1.0
η
Adc
Gate-Source Forward Voltage
V
DS
= 0 Vdc, I
G
= 1.0 mAdc
Symbol
V
(BR)GSS
I
GSS
Min.
-35
Max.
Units
Vdc
η
Adc
-0.1
15
-5.5
-6.0
I
DSS
V
GS
V
GS(off)
5
-1
-2.5
mAdc
Vdc
Vdc
V
GSF
1
Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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