參數(shù)資料
型號(hào)： JAN2N3772
廠商： MICROSEMI CORP-LAWRENCE
元件分類： 功率晶體管
英文描述： NPN HIGH POWER SILICON TRANSISTOR
中文描述： 20 A, 60 V, NPN, Si, POWER TRANSISTOR
封裝： SIMILAR TO TO-3, 2 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 67K
代理商： JAN2N3772
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 518
Devices
Qualified Level
2N3771
2N3772
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
2N3771
40
50
7.0
7.5
30
2N3772
60
100
7.0
5.0
20
6.0
150
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature Range
1) Derate linearly 34.2 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 857 mW/
0
C for T
C
> +25
0
C
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
T
J
,
T
stg
TO-3*
(TO-204AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc, R
BE
= 100
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc, V
BE
= -1.5 Vdc
Collector-Emitter Cutoff Current
V
CE
= 30 Vdc
V
CE
= 50 Vdc
Emitter-Base Cutoff Current
V
BE
= 7.0 Vdc
Collector-Emitter Cutoff Current
V
BE
= 1.5 Vdc, V
CE
= 50 Vdc
V
BE
= 1.5 Vdc, V
CE
= 100 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
2N3771
2N3772
V
(BR)
CEO
40
60
45
70
50
90
Vdc
2N3771
2N3772
V
(BR)
CER
Vdc
2N3771
2N3772
V
(BR)
CEX
Vdc
2N3771
2N3772
I
CEO
I
EBO
5.0
5.0
2.0
mAdc
2N3771
2N3772
mAdc
2N3771
2N3772
I
CEX
500
500
μ
Adc
120101
Page 1 of 2
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