- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382051 > JAN2N3637 (MICROSEMI CORP-LAWRENCE) PNP SILICON AMPLIFIER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | JAN2N3637 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SILICON AMPLIFIER TRANSISTOR |
| 中文描述： | 1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 57K |
| 代理商： | JAN2N3637 |
TECHNICAL DATA
PNP SILICON AMPLIFIER TRANSISTOR
Qualified per MIL-PRF-19500/ 357
Devices
Qualified Level
JAN
JANTX
JANTXV
JANS
2N3634
2N3634L
2N3635
2N3635L
2N3636
2N3636L
2N3637
2N3637L
MAXIMUM RATINGS
Ratings
Symbol
2N3634*
2N3635*
140
140
2N3636*
2N3637*
175
5.0
1.0
1.0
5.0
-65 to +200
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature Range
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 28.6 mW/
0
C for T
C
> +25
0
C
V
CEO
V
CBO
V
EBO
I
C
Vdc
Vdc
Vdc
Adc
W
W
0
C
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
T
J
,
T
stg
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
TO-5*
2N3634, 2N3635
2N3636, 2N3637
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 100 Vdc
V
CB
= 140 Vdc
Emitter-Base Cutoff Current
V
EB
= 3.0 Vdc
V
EB
= 5.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 100 Vdc
Symbol
Min.
Max.
Unit
2N3634, 2N3635
2N3636, 2N3637
V
(BR)
CEO
140
175
Vdc
2N3634, 2N3635
I
CBO
100
10
η
Adc
μ
Adc
I
EBO
50
10
η
Adc
μ
Adc
I
CEO
10
μ
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JAN2N3637L | PNP SILICON AMPLIFIER TRANSISTOR |
| JAN2N3715 | NPN HIGH POWER SILICON TRANSISTOR |
| JAN2N3716 | NPN HIGH POWER SILICON TRANSISTOR |
| JAN2N3740 | PNP POWER SILICON TRANSISTOR |
| JAN2N3741 | PNP POWER SILICON TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JAN2N3637L | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 175V 1A 3PIN TO-5 - Bulk 制造商:ON Semiconductor 功能描述:JAN2N3637L - Boxed Product (Development Kits) |
| JAN2N3637UB | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 175V 1A 3-Pin UB 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JAN2N3646 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| JAN2N3700 | 功能描述:兩極晶體管 - BJT JAN2N3700 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| JAN2N3700S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LOW POWER NPN SILICON TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。