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參數(shù)資料
| 型號： | JAN2N3441 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN POWER SILICON TRANSISTOR |
| 中文描述： | 3 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 封裝： | SMILAR TO TO-66, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 64K |
| 代理商： | JAN2N3441 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 369
Devices
Qualified Level
2N3441
JANTX
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
CER
V
EBO
I
B
I
C
Value
140
160
150
7.0
2.0
3.0
3.0
25
-65 to +200
Units
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Junction-to-Ambient
1) Derate linearly @ 17.1 mW/
0
C for T
A
> +25
0
C
2)
Derate linearly @ 143 mW/
0
C for T
C
> +25
0
C
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
T
J
,
T
stg
Symbol
R
θ
JC
R
θ
JA
Max.
7.0
58.5
Unit
0
C/W
0
C/W
TO-66* (TO-213AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Voltage
I
C
= 100 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc, R
BE
= 100
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc, V
BE
= -1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 140 Vdc, V
BE
= -1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
V
(BR)
CEO
140
Vdc
V
(BR)
CER
150
Vdc
V
(BR)
CEX
160
Vdc
I
CEX
1.0
mAdc
I
EBO
1.0
mAdc
120101
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