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參數(shù)資料
| 型號： | JAN2N2907AUB |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SMALL SIGNAL SILICON TRANSISTOR |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 68K |
| 代理商： | JAN2N2907AUB |
TECHNICAL DATA
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 291
Devices
2N2906A
2N2906AL
2N2906AUA
2N2906AUB
Qualified Level
JAN
JANTX
JANTXV
JANS
2N2907A
2N2907AL
2N2907AUA
2N2907AUB
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
T
J
,
T
stg
All Types
60
60
5.0
600
0.4
1.8
Unit
Vdc
Vdc
Vdc
mAdc
W
W
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25
0
C
@ T
C
= +25
0
C
(1)
(2 / 3)
Operating & Storage Junction Temperature Range
1) Derate linearly 2.28 mW/
0
C for T
A
> +25
0
C.
2) Derate linearly 10.3 mW/
0
C for T
C
> +25
0
C.
3) For UA and UB surface mount case outlines: P
T
= 1.16 W;
derate linearly 6.6mW/
0
C for T
C
> +25
0
C.
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CE
= 50 Vdc
V
CE
= 60 Vdc
Collector-Base Cutoff Current
V
CE
= 50 Vdc
Emitter-Base Cutoff Current
V
EB
= 4.0 Vdc
V
EB
= 5.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
-65 to +200
0
C
TO-18* (TO-206AA)
4 PIN*
2N2906AUA, 2N2907AUA
3 PIN*
2N2906AUB, 2N2907AUB
*See appendix A for package outline
Symbol
Min.
Max.
Unit
V
(BR)
CEO
60
Vdc
I
CBO
10
10
μ
Adc
η
Adc
I
CES
50
η
Adc
I
EBO
50
10
η
Adc
μ
Adc
120101
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|---|---|
| JANTX2N2907A | PNP SMALL SIGNAL SILICON TRANSISTOR |
| JANTX2N2907AL | PNP SMALL SIGNAL SILICON TRANSISTOR |
| JANTX2N2907AUA | PNP SMALL SIGNAL SILICON TRANSISTOR |
| JANTX2N2907AUB | PNP SMALL SIGNAL SILICON TRANSISTOR |
| JANTXV2N2906A | PNP SMALL SIGNAL SILICON TRANSISTOR |
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