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參數(shù)資料
| 型號(hào)： | JAN1N6490US |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 5.1 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | HERMETIC SEALED, GLASS, D-5A, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 130K |
| 代理商： | JAN1N6490US |
DESIGN DATA
CASE:
D-5A, hermetically sealed glass
case, per MIL-PRF- 19500/406
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (
ROJEC):
20 °C/W maximum at L = 0
THERMAL IMPEDANCE: (
ZOJX): 4.5
°C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS
MIN MAX
2.31
0.48
4.28
0.08MIN.
INCHES
MIN MAX
0.091 0.103
0.019 0.028
0.168 0.200
0.003MIN.
DIM
D
F
G
S
2.62
0.71
5.08
FIGURE 1
153
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
FAX (781) 689-0803
AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/406
1.5 WATT ZENER DIODES
NON CAVITY CONSTRUCTION
METALLURGICALLY BONDED
1N6485US
THRU
1N6491US
AND
1N4460US
AND
1N4461US
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +200°C
Power Dissapation: 1.5W @ TA=+25°C
Power Derating: 10mW/°C above TA=+25°C
Forward Voltage: 1.0V dc @ IF=200mA dc
1.5 V dc @ IF=1A dc
ZENER
VOLTAGE CURRENT IMPEDENCE IMPEDENCE CURRENT CURRENT VOLTAGE CURRENT
(NOM.)
IZT
±5%
ZZT@IZT
VOLTS
mA
OHMS
OHMS
3.3
76.0
10
400
3.6
69.0
10
400
3.9
64.0
9
400
4.3
58.0
9
400
4.7
53.0
8
500
5.1
49.0
7
500
5.6
45.0
5
600
6.2
40.0
4
200
6.8
37.0
2.5
200
TEST
DYNAMIC
KNEE
TEST
REVERSE
TEST
MAXIMUM VZ
(REG)
MAXIMUM
V
V
IZM
SURGE
TYPE
(MAX.)
(MAX.)
ZZK@IZT
IZK
(MAX.)
IR@VR
μ
A
50
50
35
5.0
4.0
1.0
0.5
10.0
5.0
VR
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
VOLTS
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.72
4.08
MA
433
397
366
332
304
280
255
230
210
VOLTS
.90
.80
.75
.70
.60
.50
.40
.35
.30
AMPS
4.2
3.9
3.6
3.3
3.0
2.7
2.5
2.3
2.1
1N6485US
1N6486US
1N6487US
1N6488US
1N6489US
1N6490US
1N6491US
1N4460US
1N4461US
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| JAN1N6491US | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| JANTX1N4461US | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| JANTX1N6485US | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| JANTX1N6486US | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| JANTX1N6487US | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
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| JAN1N649-1 | 制造商:Microsemi Corporation 功能描述:Diode Switching 600V 0.4A 2-Pin DO-35 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 600V 0.4A 2PIN DO-35 - Bulk 制造商:Microsemi 功能描述:Diode Switching 600V 0.4A 2-Pin DO-35 |
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