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參數(shù)資料
| 型號： | JAN1N6036A |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| 中文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| 封裝： | HERMETIC SEALED, GLASS, DO-13, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 202K |
| 代理商： | JAN1N6036A |
1500 WATT BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSOR
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2002
11-06-2003 REV A
W
M
.
C
SCOTTSDALE DIVISION
1N6036 and 1N6072A
1
DESCRIPTION
APPEARANCE
This popular Transient Voltage Suppressor (TVS) series for 1N6036 thru
1N6072A are JEDEC registered selections for bidirectional devices. All
have the same high Peak Pulse Power rating of 1500 W with extremely fast
response times. They are also available in military qualified selections as
described in the Features section herein. They are most often used for
protecting against transients from inductive switching environments,
induced RF effects, or induced secondary lightning effects as found in
lower surge levels of IEC61000-4-5. They are also very successful in
protecting airborne avionics and electrical systems. Since their response
time is virtually instantaneous, they can also protect from ESD and EFT per
IEC61000-4-2 and IEC61000-4-4.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
FEATURES Bidirectional TVS series for thru-hole mounting
Suppresses transients up to 1500 watts @ 10/1000
μs (see Figure 1)
Clamps transient in less than 100 pico seconds
Working voltage (V
WM
) range 5.5 V to 185 V
Hermetic sealed DO-13 metal package
JAN/TX/TXV military qualifications also available per
MIL-PRF-19500/507 for the tighter tolerance “A”
suffix types by adding the JAN, JANTX, or JANTXV
prefix, e.g. JANTXV1N6036A, etc.
For unidirectional TVS in the same DO-13 package,
see separate data sheet for the 1N5629 – 1N5665A
series (also military qualified)
Surface mount equivalent packages also available
as SMCJ5.0C - SMCJ170CA or SMCG5.0C –
SMCG170CA in separate data sheet (consult factory
for other surface mount options)
Plastic axial-leaded equivalents available in the
1.5KE6.8C – 1.5KE220CA series in separate data
sheet
DO-13
(DO-202AA)
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD and EFT per IEC 61000-4-2
and IEC 61000-4-4
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1: 1N6036 to 1N6072A
Class 2: 1N6036 to 1N6067A
Class 3: 1N6036 to 1N6061A
Class 4: 1N6036 to 1N6054A
Secondary lightning protection per IEC61000-4-5
with 12 Ohms source impedance:
Class 1 : 1N6036 to 1N6064A
Class 2: 1N6036 to 1N6057A
Class 3: 1N6036 to 1N6049A
Class 4: 1N6036 to 1N6042A
Secondary lightning protection per IEC61000-4-5
with 2 Ohms source impedance:
Class 2: 1N6036 to 1N6048A
Class 3: 1N6036 to 1N6041A
Inherently radiation hard as described in Microsemi
MicroNote 050
MECHANICAL AND PACKAGING
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
FINISH: All external metal surfaces are Tin-Lead
plated and solderable per MIL-STD-750 method
2026
POLARITY: Not applicable for bidirectional TVS
MARKING: Part number
WEIGHT: 1.4 grams. (Approx)
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimension on last page
MAXIMUM RATINGS
1500 Watts for 10/1000
μ
s
with repetition rate of 0.01%
or less*
at lead temperature (T
L
) 25
C (see Figs. 1, 2, &
4)
Operating & Storage Temperatures: -65
o
to +175
o
C
THERMAL RESISTANCE: 50
o
C/W junction to lead at
0.375 inches (10 mm) from body or 110
C/W junction to
ambient when mounted on FR4 PC board with 4 mm
copper pads (1oz) and track width 1 mm, length 25 mm
DC Power Dissipation
*
: 1 Watt at T
L
< +125
o
C 3/8” (10
mm) from body (see derating in Fig 3 and note below)
Solder Temperatures: 260
o
C for 10 s (maximum)
*
TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(V
WM
) except for transients that briefly drive the device into avalanche breakdown (V
BR
to V
C
region).
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