- 您現(xiàn)在的位置：買賣IC網 > PDF目錄382047 > JAN1N5806US (MICROSEMI CORP-SCOTTSDALE) MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP PDF資料下載
參數(shù)資料
| 型號： | JAN1N5806US |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP |
| 中文描述： | 2.5 A, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS, A, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 318K |
| 代理商： | JAN1N5806US |
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RECTIFIERS
SCOTTSDALE DIVISION
1N5802 thru 1N5806
W
M
.
C
1
DESCRIPTION
APPEARANCE
This “ultrafast recovery” rectifier diode series is military qualified to MIL-PRF-
19500/477 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak
reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. They are also
available in surface-mount packages (see separate data sheet for 1N5802US thru
1N5806US). Microsemi also offers numerous other rectifier products to meet higher
and lower current ratings with various recovery time speed requirements including
standard, fast and ultrafast in both through-hole and surface-mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
FEATURES Popular JEDEC registered 1N5802 to 1N5806 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “
Category I”
Metallurgical bonds
JAN, JANTX, JANTXV, and JANS available per MIL-PRF-
19500/477
Surface mount equivalents also available in a square end-cap
MELF configuration with “US” suffix (see separate data sheet
for 1N5802US thru 1N5806US)
MAXIMUM RATINGS
Junction Temperature: -65
o
C to +175
o
C
Storage Temperature: -65
o
C to +175
o
C
Average Rectified Forward Current (I
O
): 2.5 A @ T
L
= 75oC
Thermal Resistance: 36 oC/W junction to lead (L=.375 in)
Thermal Impedance: 4.5
o
C/W @ 10 ms heating time
Forward Surge Current: 35 Amps @ 8.3 ms half-sine
Capacitance: 25 pF @ V
R
= 10 Volts, f = 1 MHz
Solder temperature: 260oC for 10 s (maximum)
“A” Package
APPLICATIONS / BENEFITS
Ultrafast recovery 2.5 Amp rectifier series 50 to 150V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
over Copper
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 340 mg
See package dimensions on last page
ELECTRICAL CHARACTERISTICS
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
TYPE
BREAKDOWN
VOLTAGE
(MIN.)
@ 100
μ
A
V
BR
AVERAGE
RECTIFIED
CURRENT
I
O1
@
T
L
=+75oC
(NOTE 1)
AMPS
2.5
2.5
2.5
2.5
2.5
AVERAGE
RECTIFIED
CURRENT
I
O2
@
T
A
=+55oC
(Note 2)
AMPS
1.0
1.0
1.0
1.0
1.0
MAXIMUM
FORWARD
VOLTAGE
@ 1 A
(8.3 ms pulse)
V
F
VOLTS
25
o
C
0.875
0.875
0.875
REVERSE
CURRENT
(MAX)
@ V
RWM
I
R
SURGE
CURRENT
(MAX)
I
FSM
(NOTE 3)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
t
rr
VOLTS
50
75
100
125
150
VOLTS
55
80
110
135
160
μ
A
AMPS
35
35
35
35
35
ns
25
25
25
25
25
100
o
C
0.800
0.800
0.800
25
o
C
1
1
1
1
1
100
o
C
50
50
50
50
50
1N5802
1N5803
1N5804
1N5805
1N5806
NOTE 1:
I
O1
is rated at 2.5 A @ T
L
= 75oC at 3/8 inch lead length. Derate at 25 mA/oC for T
L
above 75oC.
NOTE 2:
I
O2
is rated at 1.0 A @ T
A
= 55oC for PC boards where thermal resistance from mounting point to
ambient
is sufficiently controlled where T
J(max)
does not exceed 175oC. Derate at 8.33 mA/oC for T
A
above 55oC.
NOTE 3:
T
A
= 25
o
C @ I
O
= 1.0 A and V
RWM
for ten 8.3 ms surges at 1 minute intervals
NOTE 4:
I
F
= 0.5 A, I
RM
= 0.5 A, I
R(REC)
= .05 A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2004
7-16-2004 REV A
相關PDF資料 |
PDF描述 |
|---|---|
| JAN1N5807 | ULTRA FAST RECTIFIERS |
| JAN1N5808 | ULTRA FAST RECTIFIERS |
| JAN1N5809 | Low Power, Two-Port, Hi-Speed USB2.0 (480Mbps) Switch; ; No of Pins: 10; Container: Tape & Reel |
| JAN1N5810 | ULTRA FAST RECTIFIERS |
| JAN1N5811 | ULTRA FAST RECTIFIERS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| JAN1N5807 | 制造商:Microsemi Corporation 功能描述:Diode Switching 50V 6A 2-Pin Case E 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Bulk |
| JAN1N5807CB | 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECOVERY RECTFR 50V 6A 2PIN E-LINE - Bulk |
| JAN1N5807CBUS | 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) LAW - Bulk |
| JAN1N5807URS | 功能描述:Diode Standard 50V 3A Surface Mount B, SQ-MELF 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/477 包裝:散裝 零件狀態(tài):在售 二極管類型:標準 電壓 - DC 反向（Vr）（最大值）:50V 電流 - 平均整流（Io）:3A 不同 If 時的電壓 - 正向（Vf）:875mV @ 4A 速度:快速恢復 = 200mA（Io） 反向恢復時間（trr）:30ns 不同?Vr 時的電流 - 反向漏電流:5μA @ 50V 不同?Vr，F(xiàn) 時的電容:60pF @ 10V，1MHz 安裝類型:表面貼裝 封裝/外殼:SQ-MELF，B 供應商器件封裝:B，SQ-MELF 工作溫度 - 結:-65°C ~ 175°C 標準包裝:1 |
| JAN1N5807US | 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。