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參數(shù)資料
| 型號： | JAN1N5712-1 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.075 A, SILICON, SIGNAL DIODE, DO-35 |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 61K |
| 代理商： | JAN1N5712-1 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01844
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
SCHOTTKY BARRIER
– LOW REVERSE LEAKAGE CHARACTERISTICS
DIODES
– METALLURGICALLY BONDED
Qualified per MIL-PRF-19500/444
LDS-0040 Rev. 2 (101097)
Page 1 of 3
DEVICES
LEVELS
1N5711-1
1N6857-1
*DSB2810
*1N5711
JAN
1N5712-1
1N6858-1
*DSB5712
JANTX
JANTXV
* These devices are only available as Commercial Level Product.
*COMMERCIAL
MAXIMUM RATING AT 25°C
Operating Temperature:
-65°C to +150°C
Storage Temperature:
-65°C to +150°C
Operating Current:
5711 types
:33mA dc @ TL = +130°C, L = 3/8”
2810, 5712 & 6858 types
:75mA dc @ TL = +110°C, L = 3/8”
6857 type
:75mA dc @ TL = +70°C, L = 3/8”
Derating:
all types:
Derate to 0 (zero) mA @ +150°C
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
TYPE
NUMBER
MINIMUM
BEAKDOWN
VOLTAAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM REVERSE
LEAKAGE CURRENT
MAXIMUM
CAPACITANCE @
VR = 0 VOLTS
f = 1.0MHz
ESDS
CLASS
VBR @ 10μA
VF @ 1mA
VF @ IF
IR @ VR
CT
VOLTS
MILLIAMPS
nA
VOLTS
PICO FARADS
DSB2810
20
0.41
1.0 @ 35
100
15
2.0
1
1N5711, -1
70
0.41
1.0 @ 15
200
50
2.0
1
DSB5712
20
0.41
1.0 @ 35
150
16
2.0
1
1N5712-1
20
0.41
1.0 @ 35
150
16
2.0
1
1N6857-1
20
0.35
0.75 @ 35
150
16
4.5
2
1N6858-1
70
0.36
0.65 @ 15
200
50
4.5
2
DO-35
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTXV1N5712-1 | 0.075 A, SILICON, SIGNAL DIODE, DO-35 |
| JANTX1N6858-1 | 0.075 A, SILICON, SIGNAL DIODE, DO-35 |
| JANTXV1N5711-1 | 0.033 A, SILICON, SIGNAL DIODE, DO-35 |
| JAN1N5711-1 | 0.033 A, SILICON, SIGNAL DIODE, DO-35 |
| JANTX1N5711-1 | 0.033 A, SILICON, SIGNAL DIODE, DO-35 |
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