參數(shù)資料
型號: JAN1N3998B
廠商: Microsemi Corporation
元件分類: 參考電壓二極管
英文描述: Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
中文描述: 在250μA低電流操作,低反向漏,低噪聲穩(wěn)壓二極管(250μA工作電流,小反向漏電流,低噪聲,齊納二極管)
文件頁數(shù): 1/4頁
文件大?。?/td> 215K
代理商: JAN1N3998B
10 WATT ZENER DIODES
SCOTTSDALE DIVISION
1N2970 thru 1N3015B
and 1N3993 thru 1N4000A
W
M
.
C
1
1
DESCRIPTION
APPEARANCE
These high power 10 W Zener diodes represented by the JEDEC
registered 1N2970 thru 1N3015B and 1N3993 thru 1N4000A series provide
voltage regulation in a selection over a 3.9 V to 200 V broad range of
voltages. They may be operated up to 10 W with adequate mounting and
heat sinking with their low thermal resistance. These Zeners are also
available in JAN, JANTX, JANTXV military qualifications. Microsemi also
offers numerous other Zener products to meet higher and lower power
applications.
DO-4
(DO-203AA)
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
FEATURES
相關(guān)PDF資料
PDF描述
JAN1N3998C Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
JAN1N3998D Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
JAN1N3998R Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
JAN1N3998RC Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
JAN1N2984A 16-bit registered driver with inverted register enable and 30 Ohm termination resistors (3-state) - Description: 2.5/3.3V 16-Bit Registered Driver with Inverted Register Enable with 30 Ohm Termination Resistors (3-State) ; Logic switching levels: TTL ; Number of pins: 48 ; Output drive capability: Low ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 4~6 ns; Voltage: Low
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