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參數(shù)資料
| 型號： | JAN1N3824AUR-1 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 中文描述： | 4.3 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 288K |
| 代理商： | JAN1N3824AUR-1 |
1 Watt Metal Case Zener Diodes
SCOTTSDALE DIVISION
1N3821 thru 1N3830A
W
M
.
C
1
DESCRIPTION
APPEARANCE
This well established zener diode series for the 1N3821 thru 1N3830A
JEDEC registration in the glass hermetic sealed DO-13 package provides a
low voltage selection for 3.3 to 7.5 volts. It is also well suited for high-
reliability applications where it is available in JAN, JANTX, and JANTXV
military qualifications. Higher voltages are also available in the 1N3016
thru 1N3051 series (6.8 V to 200 V) in the same package (see separate
data sheet). Microsemi also offers numerous other Zener diode products
for a variety of other packages including surface mount.
DO-13
(DO-202AA)
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
FEATURES APPLICATIONS / BENEFITS
Zener Voltage Range: 3.3 V to 7.5 V
Hermetically sealed DO-13 metal package
Internally solder-bonded construction.
Also available in JAN, JANTX, JANTXV
qualifications per MIL-PRF19500/115 by adding the
JAN, JANTX, or JANTXV prefixes to part numbers
for desired level of screening, e.g. JANTX1N3821,
JANTXV1N3051A, etc.
Surface mount also available with 1N3821UR-1
thru 1N30330AUR-1 series on separate data sheet
Regulates voltage over a broad operating current
and temperature range
Low voltage selection from 3.3 to 7.5 V
Tight voltage tolerances available
Low reverse (leakage) currents
Nonsensitive to ESD
Hermetically sealed metal package
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
Operating Junction and Storage Temperatures:
-65
o
C to +175
o
C
THERMAL RESISTANCE: 50
o
C/W* junction to lead
at 0.375 inches (10 mm) from body or 110
C/W
junction to ambient when leads are mounted on FR4
PC board with 4 mm
copper pads (1 oz) and track
width 1 mm, length 25 mm
DC Power Dissipation
*
: 1 Watt at T
L
< +125
o
C 3/8”
(10 mm) from body or 1.0 Watts at T
L
< +65
o
C when
mounted on FR4 PC board as described for thermal
resistance above (also see Fig 1)
Forward Voltage @ 200 mA: 1.5 Volts.
Solder Temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
FINISH: All external surfaces are Tin-Lead (Pb/Sn)
plated and solderable per MIL-STD-750 method
2026
POLARITY: Cathode connected case.
WEIGHT: 1.4 grams.
Tape & Reel option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimensions on last page
* For further mounting reference, thermal resistance from junction to metal case may be reduced to
<
20
o
C/W
when mounting DO-13 metal case directly on heat sink.
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2003
11-06-2003 REV A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JAN1N3824AUR-1TR | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| JAN1N3825AUR-1TR | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| JAN1N3828ATR | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| JAN1N3828AUR-1 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| JAN1N3828UR-1TR | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JAN1N3824C-1 | 功能描述:Zener Diode 4.3V 1W ±2% Through Hole DO-41 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/115 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標稱值）（Vz）:4.3V 容差:±2% 功率 - 最大值:1W 阻抗（最大值）（Zzt）:9 歐姆 不同?Vr 時的電流 - 反向漏電流:5μA @ 1V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 200mA 工作溫度:-65°C ~ 175°C 安裝類型:通孔 封裝/外殼:DO-204AL，DO-41，軸向 供應(yīng)商器件封裝:DO-41 標準包裝:1 |
| JAN1N3824CUR-1 | 功能描述:Zener Diode 4.3V 1W ±2% Surface Mount DO-213AB (MELF, LL41) 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/115 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標稱值）（Vz）:4.3V 容差:±2% 功率 - 最大值:1W 阻抗（最大值）（Zzt）:9 歐姆 不同?Vr 時的電流 - 反向漏電流:5μA @ 1V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 200mA 工作溫度:-65°C ~ 175°C 安裝類型:表面貼裝 封裝/外殼:DO-213AB，MELF 供應(yīng)商器件封裝:DO-213AB（MELF，LL41） 標準包裝:1 |
| JAN1N3824D-1 | 功能描述:Zener Diode 4.3V 1W ±1% Through Hole DO-41 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/115 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標稱值）（Vz）:4.3V 容差:±1% 功率 - 最大值:1W 阻抗（最大值）（Zzt）:9 歐姆 不同?Vr 時的電流 - 反向漏電流:5μA @ 1V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 200mA 工作溫度:-65°C ~ 175°C 安裝類型:通孔 封裝/外殼:DO-204AL，DO-41，軸向 供應(yīng)商器件封裝:DO-41 標準包裝:1 |
| JAN1N3824DUR-1 | 功能描述:Zener Diode 4.3V 1W ±1% Surface Mount DO-213AB (MELF, LL41) 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/115 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標稱值）（Vz）:4.3V 容差:±1% 功率 - 最大值:1W 阻抗（最大值）（Zzt）:9 歐姆 不同?Vr 時的電流 - 反向漏電流:5μA @ 1V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 200mA 工作溫度:-65°C ~ 175°C 安裝類型:表面貼裝 封裝/外殼:DO-213AB，MELF 供應(yīng)商器件封裝:DO-213AB（MELF，LL41） 標準包裝:1 |
| JAN1N3825A | 制造商: 功能描述: 制造商:undefined 功能描述: |
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