參數(shù)資料
型號(hào): J305-TA
廠商: VISHAY SILICONIX
元件分類: 小信號(hào)晶體管
英文描述: N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA
封裝: TO-92, 3 PIN
文件頁數(shù): 2/7頁
文件大?。?/td> 95K
代理商: J305-TA
J304/305
Vishay Siliconix
www.vishay.com
2
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J304
J305
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V(BR)GSS
IG = 1 mA , VDS = 0 V
35
30
V
Gate-Source Cutoff Voltage
VGS(off)
VDS = 15 V, ID = 1 nA
2
6
0.5
3
V
Saturation Drain Currentb
IDSS
VDS = 15 V, VGS = 0 V
5
15
1
8
mA
Gate Reverse Current
IGSS
VGS = 20 V, VDS = 0 V
2
100
pA
Gate Reverse Current
IGSS
TA = 100_C
0.2
nA
Gate Operating Currentb
IG
VDG = 10 V, ID = 1 mA
20
pA
Drain Cutoff Current
ID(off)
VDS = 10 V, VGS = 6 V
2
pA
Drain-Source On-Resistance
rDS(on)
VGS = 0 V, ID = 300 mA
200
W
Gate-Source Forward Voltage
VGS(F)
IG = 1 mA , VDS = 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductance
gfs
VDS = 15 V VGS = 0 V f = 1 kHz
4.5
7.5
3
mS
Common-Source
Output Conductance
gos
VDS = 15 V, VGS = 0 V, f = 1 kHz
50
mS
Common-Source Input Capacitance
Ciss
2.2
Common-Source
Reverse Transfer Capacitance
Crss
VDS = 15 V, VGS = 0 V
f = 1 MHz
0.7
pF
Common-Source
Output Capacitance
Coss
f = 1 MHz
1
p
Equivalent Input Noise Voltage
en
VDS = 10 V, VGS = 0 V
f = 100 Hz
10
nV
√Hz
TYPICAL HIGH-FREQUENCY SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits (Typ)
J304
J305
Parameter
Symbol
Test Conditions
100
MHz
400
MHz
100
MHz
400
MHz
Unit
High-Frequency
Common-Source Input Conductance
giss
VDS = 15 V, VGS = 0 V
80
800
80
mS
Common-Source Input Susceptance
biss
2
7.5
2
mS
Common-Source Output Conductance
goss
VDS = 15 V VGS = 0 V
60
80
60
mS
Common-Source Output Susceptance
boss
VDS = 15 V, VGS = 0 V
0.8
3.6
0.8
mS
Common-Source Forward Transconductance
gfs
4.4
4.2
3
mS
Common-Source Power Gain
Gps
VDS = 15 V, ID = 5 mA
20
11
dB
Noise Figure
NF
RG = 1 kW
1.7
3.8
dB
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NH
b.
Pulse test: PW v300 ms, duty cycle v2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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