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參數(shù)資料
| 型號(hào)： | J13009 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistor |
| 中文描述： | 高壓快速NPN電源開關(guān)晶體管 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | J13009 |
2
www.fairchildsemi.com
FJP13009 Rev. B
F
Electrical Characteristics
T
C
= 25°C unless otherwise noted
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
h
FE
Classification
Classification
Symbol
Parameter
Conditions
Min.
Typ.
Max
Units
V
CEO
(sus)
I
EBO
h
FE
Collector-Emitter Sustaining Voltage
I
C
= 10mA, I
B
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 5V, I
C
= 5A (h
FE1
)
V
CE
= 5V, I
C
= 8A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
I
C
= 12A, I
B
= 3A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
V
CB
= 10V, f = 0.1MHz
V
CE
= 10V, I
C
= 0.5A
V
CC
= 125V, I
C
= 8A
I
B1
= - I
B2
= 1.6A, R
L
= 15,6
400
V
Emitter Cut-off Current
1
mA
* DC Current Gain
8
6
40
30
V
CE
(sat)
* Collector-Emitter Saturation Voltage
1
1.5
3
V
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
1.2
1.6
V
V
C
ob
f
T
t
ON
t
STG
t
F
Output Capacitance
180
pF
Current Gain Bandwidth Product
4
MHz
Turn On Time
1.1
μ
s
Storage Time
3
μ
s
Fall Time
0.7
μ
s
H1
H2
h
FE1
8 ~ 17
15 ~ 28
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