參數(shù)資料
型號: IXUC200N055
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: Trench Power MOSFET ISOPLUS220
中文描述: 200 A, 55 V, 0.0051 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOPLUS220, 3 PIN
文件頁數(shù): 2/2頁
文件大?。?/td> 53K
代理商: IXUC200N055
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
4,850,072
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
Q
g(on)
Q
gs
Q
gd
200
nC
V
GS
= 10 V, V
DS
= 14 V, I
D
= 100 A
44
nC
72
nC
t
d(on)
t
r
t
d(off)
t
f
35
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
,
I
D
= 50 A, R
G
= 4.7
115
ns
230
ns
155
ns
R
thJC
R
thCH
0.5
K/W
0.30
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
SD
I
F
= 50 A, V
GS
= 0 V
Note 3
0.9
1.3
V
t
rr
I
F
= 150 A, di/dt = -200 A/
μ
s, V
DS
= 30 V
80
ns
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t
300
μ
s, duty cycle d
2 %
IXUC200N055
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
ISOPLUS220 OUTLINE
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