參數(shù)資料
型號(hào): IXUC100N055
廠商: IXYS CORP
元件分類: JFETs
英文描述: Trench Power MOSFET(最大漏源擊穿電壓55V,導(dǎo)通電阻7.7mΩ的N溝道增強(qiáng)型功率MOSFET)
中文描述: 100 A, 55 V, 0.0077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-273AA
封裝: ISOPLUS 220, TO-273, 3 PIN
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 406K
代理商: IXUC100N055
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
4,850,072
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
Q
g(on)
Q
gs
Q
gd
100
22
36
nC
nC
nC
V
GS
= 10 V, V
DS
= 14 V, I
D
= 50 A
t
d(on)
t
r
t
d(off)
t
f
35
115
230
155
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
,
I
D
= 25 A, R
G
= 10
R
thJC
R
thCH
1
K/W
K/W
0.30
Source-Drain Diode
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
SD
I
= 50 A, V
GS
= 0 V
Note 3
0.9
1.5
V
t
rr
I
F
= 75A, di/dt = -100A/ s, V
DS
= 30 V
80
ns
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
ISOPLUS220 OUTLINE
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t 300 s, duty cycle d 2 %
IXUC100N055
相關(guān)PDF資料
PDF描述
IXUC120N10 Trench Power MOSFET ISOPLUS220
IXUC160N075 Trench Power MOSFET
IXUC200N055 Trench Power MOSFET ISOPLUS220
IXUC60N10 Trench Power MOSFET ISOPLUS220-TM
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