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參數(shù)資料
| 型號： | IXTT75N10 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | MegaMOS FET |
| 中文描述： | 75 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA |
| 封裝： | TO-268, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 53K |
| 代理商： | IXTT75N10 |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTN 58N50
IXTN 61N50
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
20
30
S
C
iss
C
oss
C
rss
11000
1550
225
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
30
60
100
50
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 50 A
R
G
= 1
(External)
Q
g
Q
gs
Q
gd
420
55
160
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D2
R
thJC
R
thCK
0.20 K/W
0.05
K/W
Source-Drain Diode
Ratings and Characteristics
(T
J
= 25°C unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
I
S
I
SM
V
GS
= 0 V
Repetitive; pulse width limited by T
JM
61
244
A
A
V
SD
I
F
= I
S,
V
GS
= 0 V,
Pulse test, t
≤
300 μs, duty cycle
≤
2 %
1.5
V
t
rr
I
F
= 50A
,
di/dt = -100 A/μs, V
R
= 100 V
800
ns
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
Millimeter
Min.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
38.00
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
Inches
Max.
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.23
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
Min.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
Max.
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
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