參數(shù)資料
型號： IXTP02N50D
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： High Voltage MOSFET N-Channel, Depletion Mode
中文描述： 0.2 A, 500 V, 30 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AD
封裝： TO-220AD, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 100K
代理商： IXTP02N50D
Symbol
Test Conditions
Maximum Ratings
V
DSX
V
DGX
V
GS
V
GSM
I
DSS
I
DM
P
D
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C
500
V
500
V
Continuous
± 20
V
Transient
± 30
V
T
C
= 25°C; T
J
= 25°C to 150°C
T
C
= 25°C, pulse width limited by T
J
200
mA
800
mA
T
C
= 25°C
T
A
= 25°C
25
1.1
W
W
T
J
T
JM
T
stg
T
L
T
ISOL
M
d
Weight
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.6 mm (0.063 in.) from case for 10 s
300
°C
Plastic case for 10 s (IXTU)
300
°C
Mounting torque
TO-220
1.3 / 10
Nm/lb.
TO-220
TO-251
TO-252
4
g
g
g
0.8
0.8
High Voltage MOSFET
2006 IXYS All rights reserved
N-Channel, Depletion Mode
IXTP 02N50D
IXTU 02N50D
IXTY 02N50D
V
DSS
I
D25
R
DS(on)
= 30
= 500
= 200 mA
V
Ω
Features
z
Normally ON mode
z
Low R
DS (on)
HDMOS
TM
process
z
Rugged polysilicon gate cell structure
z
Fast switching speed
Applications
z
Level shifting
z
Triggers
z
Solid state relays
z
Current regulators
98861A (01/06)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
Test Conditions
Characteristic Values
min.
typ.
max.
V
DSX
V
GS(off)
V
GS
= -10 V, I
D
= 25
μ
A
V
DS
= 25V, I
D
= 25
μ
A
500
V
-2.5
-5
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSX(off)
V
DS
= V
DSS
,
V
GS
= -10 V
10
μ
A
μ
A
T
J
= 125
°
C
250
R
DS(on)
V
GS
= 0 V, I
D
= 50 mA
Note 1
20
30
Ω
I
D(on)
V
GS
= 0 V, V
DS
= 25V
Note 1
250
mA
Preliminary Data Sheet
GDS
TO-220 (IXTP)
Pins:1 - Gate
3 - Source TAB - Drain
2 - Drain
D (TAB)
TO-251 (IXTU)
D
S
G
D (TAB)
TO-252 (IXTY)
G
S
D (TAB)
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