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參數(shù)資料
| 型號(hào)： | IXTM10N100 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | MegaMOS FET |
| 中文描述： | 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 封裝： | TO-204AA, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 106K |
| 代理商： | IXTM10N100 |
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
1000
1000
V
V
±
20
±
30
V
V
T
C
= 25
°
C
10N100
12N100
10N100
12N100
10
12
40
48
A
A
A
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
P
D
T
J
T
JM
T
stg
M
d
Weight
T
C
= 25
°
C
300
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10
Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
TO-247 AD (IXTH)
MegaMOS
TM
FET
N-Channel Enhancement Mode
TO-204 AA (IXTM)
V
DSS
1000 V
1000 V
I
D25
10 A
12 A
R
DS(on)
1.20
1.05
IXTH / IXTM 10N100
IXTH / IXTM 12N100
G = Gate,
S = Source,
D = Drain,
TAB = Drain
G
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 250
μ
A
1000
V
V
2
4.5
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
250
μ
A
mA
1
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
10N100
12N100
1.20
1.05
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
91540E(5/96)
Features
l
International standard packages
l
Low R
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Low package inductance (< 5 nH)
- easy to drive and to protect
l
Fast switching times
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor controls
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
Space savings
l
High power density
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXTH12N100 | N-Channel Enhancement Mode MegaMOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻1.05Ω的N溝道增強(qiáng)型MegaMOSFET) |
| IXTH10P50 | P-Channel Enhancement Mode Standard Power MOSFET(最大漏源擊穿電壓-500V,導(dǎo)通電阻0.90Ω的P溝道增強(qiáng)型標(biāo)準(zhǔn)功率MOSFET) |
| IXTH10P60 | Standard Power MOSFET |
| IXTH11N80 | MegaMOSFET |
| IXTH13N80 | MegaMOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXTM10N60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-204AC |
| IXTM10N60A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-204AC |
| IXTM10N80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 10A I(D) | TO-3 |
| IXTM10N90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 10A I(D) | TO-3 |
| IXTM10N95 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 10A I(D) | TO-3 |
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