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參數(shù)資料
| 型號(hào)： | IXTK90N15 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 90A I(D) | TO-264AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 150伏五（巴西）直| 90A型（丁）|對(duì)264AA |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 85K |
| 代理商： | IXTK90N15 |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
Symbol
(T
J
= 25°C unless otherwise specified)
Test Conditions
Characteristic values
Min.
Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
50
65
S
C
iss
C
oss
C
rss
6400
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1700
pF
510
pF
t
d(on)
t
r
t
d(off)
t
f
28
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 1.5
(External)
30
ns
115
ns
17
ns
Q
g(on)
Q
gs
Q
gd
240
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
55
nC
85
nC
R
thJC
R
thCK
0.30K/W
0.15
K/W
Source-Drain Diode
Ratings and Characteristics
(T
J
= 25°C unless otherwise specified)
Min.
Symbol
Test Conditions
Typ. Max.
I
S
V
GS
= 0V
90
A
I
SM
Repetitive; pulse width limited by T
JM
360
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300 μs, duty cycle d
≤
2 %
1.5
V
t
rr
I
F
= 30A, -di/dt = 100 A/μs, V
R
= 100V
300
ns
Q
rr
6
μ
C
IXTK 90N15
TO-264 AA Outline
Millimeter
Min.
Inches
Max.
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
.190
.100
.079
.044
.094
.114
.021
1.020
.780
.202
.114
.083
.056
.106
.122
.033
1.030
.786
5.46 BSC
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
.215 BSC
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
Dim.
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