參數(shù)資料
型號(hào)： IXTH50P085
廠商： IXYS CORP
元件分類(lèi)： JFETs
英文描述： Standard Power MOSFET
中文描述： 50 A, 85 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247, 3 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 550K
代理商： IXTH50P085
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 50P085
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
1 2 3
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= -10 V; I
D
= I
D25
, pulse test
8
16
S
C
iss
C
oss
C
rss
4200
1720
750
pF
pF
pF
V
GS
= 0 V, V
DS
= -25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
46
ns
V
GS
= -10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 4.7
(External)
39
86
38
ns
ns
ns
Q
g(on)
Q
gs
Q
gd
150
nC
V
GS
= -10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
36
70
nC
nC
R
thJC
R
thCS
0.42
K/W
K/W
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0
-25
A
I
SM
Repetitive; pulse width limited by T
JM
-200
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
-3
V
t
rr
I
F
= I
S
, di/dt = 100 A/
μ
s, V
R
= -50 V
180
ns
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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