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參數(shù)資料
| 型號： | IXTH20N60 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | MegaMOS FET |
| 中文描述： | 20 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 105K |
| 代理商： | IXTH20N60 |
2 - 4
2000 IXYS All rights reserved
IXTH 20N60
IXTM 20N60
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
11
18
S
C
iss
C
oss
C
rss
4500
420
140
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
20
43
70
40
40
60
90
60
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
,
(External)
Q
g(on)
Q
gs
Q
gd
150
29
60
170
40
85
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.42
K/W
K/W
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
20
A
I
SM
Repetitive;
80
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
600
ns
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
TO-247 AD (IXTH) Outline
Dim.
Millimeter
Min.
6.4
1.53
1.45
Inches
Min.
.250
.060
.057
Max.
11.4
3.42
1.60
22.22
11.17
5.71
Max.
.450
.135
.063
.875
.440
.225
A
A1
b
D
e
e1
10.67
5.21
.420
.205
L
p
p1 3.84
q
R
12.58
R1
s
16.64
11.18
3.84
12.19
4.19
4.19
.440
.151
.151
1.187 BSC
.495
.131
.655
.480
.165
.165
30.15 BSC
13.33
4.77
17.14
.525
.188
.675
3.33
TO-204AE (IXTM) Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
Pins
1 - Gate
Case - Drain
2 - Source
1 2 3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXTM20N60 | MegaMOS FET |
| IXTH21N50 | MegaMOSFET |
| IXTM21N50 | MegaMOSFET |
| IXTM24N50 | MegaMOSFET |
| IXTH24P20 | Standard Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXTH20N60 | 制造商:IXYS Corporation 功能描述:MOSFET N TO-247 |
| IXTH20N60MA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-247(5) |
| IXTH20N60MB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-247(5) |
| IXTH20P25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 20A I(D) | TO-218VAR |
| IXTH20P50P | 功能描述:MOSFET -20.0 Amps -500V 0.450 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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