- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383200 > IXSM25N100 (IXYS CORP) Low VCE(sat) IGBT, High Speed IGBT PDF資料下載
參數(shù)資料
| 型號： | IXSM25N100 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low VCE(sat) IGBT, High Speed IGBT |
| 中文描述： | 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 102K |
| 代理商： | IXSM25N100 |
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation. All rights reserved.
IXSH 25N100
IXSH 25N100A IXSM 25N100A
IXSM 25N100
T
J
- Degrees C
-50
-25
0
25
50
75
100
125
150
B
G
0.7
0.8
0.9
1.0
1.1
1.2
1.3
V
- Volts
5
6
7
8
9
10
11
12
13
14
15
I
C
0
10
20
30
40
50
T
J
- Degrees C
-50
-25
0
25
50
75
100
125
150
V
C
0.6
0.8
1.0
1.2
1.4
1.6
V
GE
- Volts
8
9
10
11
12
13
14
15
V
C
0
1
2
3
4
5
6
7
8
9
10
V
CE
- Volts
0
2
4
6
8
10
12
14
16
18
20
I
C
0
20
40
60
80
100
120
140
160
180
7V
9V
11V
13V
V
CE
- Volts
0
1
2
3
4
5
I
C
0
10
20
30
40
50
T
J
= 25°C
11V
7V
9V
13V
V
GE
= 15V
V
GE
=15V
T
J
= 25°C
I
C
= 12.5A
I
C
= 25A
I
C
= 50A
T
J
= 25°C
I
C
= 12.5A
I
C
= 25A
I
C
= 50A
V
GE
= 15V
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
V
CE
= 10V
BV
CES
I
C
= 3mA
V
GE(th)
I
C
= 2.5mA
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
Fig. 4
Temperature Dependence
of Output Saturation Voltage
Fig. 5 Input Admittance
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
Fig. 1 Saturation Characteristics
Fig. 2
Output Characterstics
相關PDF資料 |
PDF描述 |
|---|---|
| IXSM25N100A | Low VCE(sat) IGBT, High Speed IGBT |
| IXSH25N120AU1 | IGBT with Diode |
| IXSH25N120A | IGBT |
| IXSH30N60BD1 | High Speed IGBT with Diode(VCES為600V，VCE(sat)為2.0V的高速絕緣柵雙極晶體管(帶二極管）) |
| IXSH30N60B | High Speed IGBT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IXSM25N100A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High Speed IGBT |
| IXSM30N60 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High Speed IGBT |
| IXSM30N60A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High Speed IGBT |
| IXSM35N100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 35A I(C) | TO-204AE |
| IXSM35N100A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High speed IGBT |
發(fā)布緊急采購，3分鐘左右您將得到回復。