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參數(shù)資料
| 型號： | IXSH10N120AU1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | IGBT with Diode |
| 中文描述： | 20 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | IXSH10N120AU1 |
1996 IXYS Corporation. All rights reserved.
IXYS Semiconductor GmbH
Edisonstr.15, D-68623 Lampertheim, Germany
Phone: +49-6206-5030 Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
IXSH10N120AU1
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 M
1200
1200
V
V
V
GES
V
GEM
Continuous
Transient
±20
±30
V
V
I
C25
I
C90
I
CM
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
20
10
40
A
A
A
SSOA
(RBSOA)
V
GE
= 15 V, T
J
= 125°C, R
G
= 150
Clamped inductive load, L = 300 μH
I
CM
= 20
@ 0.8 V
CES
A
t
sc
T
J
= 125oC, V
CE
= 720 V; V
GE
= 15V, R
G
= 150
5
μs
P
C
T
C
= 25°C
100
W
T
J
T
JM
T
STG
-55 ... +150
°C
°C
°C
150
-55 ... +150
M
d
Mounting torque
.
1.15/10
Nm/lb-in.
Weight
6
g
Max. Lead Temperature for
Soldering
(1.6mm from case for 10s)
300
°C
94523C (1/96)
Features
Hi
guaranteed short circuit SOA capability.
IGBT with anti-parallel diode in one
package
2
nd
generation HDMOS
TM
process
Low VCE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
DC choppers
Advantages
Saves space (two devices in one
package
Easy to mount(isolated mounting
hole)
Reduces assembly time and cost
Runs cooler than equivalent
6-pack IGBTs
Easier to package to meet UL
requirements
IGBT with Diode
"S" Series - Improved SCSOA Capability
PRELIMINARY DATA SHEET
Symbol
(T
J
= 25°C unless otherwise specified)
Test Conditions
Characteristic Values
Min. Typ.
Max.
BV
CES
I
C
= 3.25 mA, V
GE
= 0 V
= 750
μ
A, V
CE
= V
GE
1200
V
V
GE(th)
I
C
4
8
V
I
CES
V
= 0.8 V
CES
,V
GE
= 0 V
Note 2
T
J
= 25°C
T
J
= 125°C
400
μA
mA
5
I
GES
V
CE
= 0 V, V
GE
= ±20 V
+ 100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4.0
V
TO-247AD
GCE
I
C25
V
CES
V
CE(sat)
= 4.0 V
= 20 A
= 1200 V
E
G
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXSH10N60 | High Speed IGBT - Short Circuit SOA Capability |
| IXSH10N60A | High Speed IGBT - Short Circuit SOA Capability |
| IXSH15N120A | IGBT |
| IXSH15N120BD1 | S Series - Improved SCSOA Capability |
| IXST15N120BD1 | S Series - Improved SCSOA Capability |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXSH10N60 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Speed IGBT - Short Circuit SOA Capability |
| IXSH10N60A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Speed IGBT - Short Circuit SOA Capability |
| IXSH10N60B2D1 | 功能描述:IGBT 晶體管 10 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH15N120A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT |
| IXSH15N120AU1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT with Diode |
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