- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383200 > IXR100 (Texas Instruments, Inc.) Isolated, Self-Powered,Temperature Sensor Conditioning 4-20mA Two-Wire Transmitter(隔離的，自備電源的溫度傳感器4-20mA可兩線傳輸) PDF資料下載
參數(shù)資料
| 型號： | IXR100 |
| 廠商： | Texas Instruments, Inc. |
| 元件分類： | 溫度/濕度傳感器 |
| 英文描述： | Isolated, Self-Powered,Temperature Sensor Conditioning 4-20mA Two-Wire Transmitter(隔離的，自備電源的溫度傳感器4-20mA可兩線傳輸) |
| 中文描述： | 隔離，自供電，溫度傳感器調節(jié)的4 - 20mA雙線變送器（隔離的，自備電源的溫度傳感器的4 - 20mA可兩線傳輸） |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 157K |
| 代理商： | IXR100 |
IXR100
11
V
D
/
T = –2mV/
°
C. R
5
and R
6
form a voltage divider for
the diode voltage V
D
. The divider values are selected so that
the gradient
V
D
/
T equals the gradient of the thermo-
couple at the reference temperature. At +25
°
C this is
approximately –52
μ
V/
°
C (obtained from standard thermo-
couple table); therefore,
V
TC
/
T = (
V
D
/
T)(R
6
/(R
5
+ R
6
)) (2)
–52
μ
V/
°
C = (–2000
μ
V/
°
C)(R
6
/(R
5
+R
6
))
R
5
is chosen as 3.74k
to be much larger than the resistance
of the diode. Solving for R
6
yields 100
.
Transmit 4mA for T
l
= 0
°
C and 20mA for T
l
= +1000
°
C.
Note: V
lN
= V
IN+
– V
IN–
indicates that T
l
is relative to T
2
.
The input full scale span is 58mV. R
S
is found from
Equation (1) and equals 153.9
.
R
4
is chosen to make the output 4mA at T
TC
= 0
°
C (V
TC
=
1.28mV) and T
D
= 25
°
C (V
D
= 0.6V).
V
TC
will be –1.28mV when T
TC
= 0
°
C and the reference
junction is at +25
°
C. V
4
must be computed for T
D
= +25
°
C
to make V
IN
= 0V.
V
D(25
°
C)
= 600mV
V
IN(25
°
C)
= 600mV (100/3740) = 16.0mV
V
IN
= V
IN+
– V
IN–
= V
TC
+ V
4
– V
IN–
With V
IN
= 0 and V
TC
= –1.28mV,
V
4
= V
IN+
– V
TC
V
4
= 16.0mV – (–1.28mV)
0.4mA (R
4
) = 17.28mV
R
4
= 43.2
THERMOCOUPLE BURN-OUT INDICATION
In process control applications it is desirable to detect when
a thermocouple has burned out. This is typically done by
forcing the two-wire transmitter current to the upper or
lower limit when the thermocouple impedance goes very
high. The circuits of Figures 10, 11 and 12 inherently have
down scale indication. When the impedance of the thermo-
couple gets very large (open) the bias current flowing into
the + input (large impedance) will cause I
O
to go to its lower
range limit value (about 3.6mA). If up scale indication is
desired, the circuit of Figure 13 should be used. When the T
C
opens, the output will go to its upper range limit value (about
32mA or higher).
FIGURE 9. Pt100 RTD Without Linearization.
3
7
6
2
R
S
V
IN
+
+
–
IXR100
–
5
0.4mA
R
Z
RTD
0.4mA
R
0.01μF
D
1
1N4148
R
L
–
+
V
OUT
+V
S
4-20mA
4
1
28
18
相關PDF資料 |
PDF描述 |
|---|---|
| IXRH50N100 | IGBT with Reverse Blocking capability |
| IXRH50N120 | IGBT with Reverse Blocking capability |
| IXRH50N60 | IGBT with Reverse Blocking capability |
| IXRH50N80 | IGBT with Reverse Blocking capability |
| IXSA10N60B2D1 | High Speed IGBT with Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IXRB5-506MINIPACK2 | 功能描述:IGBT 模塊 MiniPack 2 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXRFD630 | 制造商:IXYS Corporation 功能描述:DRIVER MOSFET 30A DE275 制造商:IXYS Corporation 功能描述:DRIVER, MOSFET, 30A, DE275 |
| IXRH40N120 | 功能描述:IGBT 晶體管 40 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXRH50N100 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT with Reverse Blocking capability |
| IXRH50N120 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT with Reverse Blocking capability |
發(fā)布緊急采購，3分鐘左右您將得到回復。