參數(shù)資料
型號: IXGP30N60C2
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: HiPerFAST IGBT C2- Class High Speed IGBTs
中文描述: 70 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 561K
代理商: IXGP30N60C2
IXGP 30N60C2
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
300
μ
s, duty cycle
2 %
= 24 A; V
CE
= 10 V,
18
28
S
C
ies
C
oes
C
res
1430
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
110
pF
40
pF
Q
g
Q
ge
Q
gc
70
nC
I
C
= 24 A, V
GE
= 15 V, V
CE
= 300 V
10
nC
23
nC
t
d(on)
t
ri
t
d(off)
t
fi
E
off
13
ns
15
ns
70
140
ns
60
ns
0.19
0.30
mJ
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
13
ns
17
ns
0.22
mJ
120
ns
130
ns
0.59
mJ
R
thJC
R
thCH
0.65 K/W
0.25
K/W
Inductive load, T
J
= 25
°
C
I
C
= 24 A, V
= 15 V
V
CE
= 400 V, R
G
= 5
Inductive load, T
J
= 125
°
C
I
C
= 24 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= 5
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
TO-220 Outline
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